Autore
GIUSEPPE IANNACCONE
Unimap Dati autore
- Professore Associato presso Dipartimento di Ingegneria dell' Informazione: Elettronica, Informatica, Telecomunicazioni
- Membro della Facolta' di Ingegneria
- Settore scientifico disciplinare ING-INF/01 ELETTRONICA
- In servizio
Prodotti
- Articoli
- Approaches to the tunneling time based on the Larmor clock and particle absorption as particular cases of the stay-time method 1994
- Characteristic times in the motion of a particle 1994
- Report on the First European Workshop on Tunneling Times 1994
- General relation between density of states and dwell times in mesoscopic systems 1995
- Noise measurements in resonant tunnelling structures as a function of current and temperature 1995
- On the approach to the stationary-state-scattering limit within Bohmian mechanics 1995
- Unified approach to electron transport in double-barrier structures 1995
- Compact formula for the density of states in a quantum well 1996
- Shot noise in resonant tunneling structures 1997
- Theory of Conductance and noise additivity in parallel mesoscopic conductors 1997
- Enhanced shot noise in resonant tunneling: theory and experiment 1998
- Modeling of shot noise in resonant tunneling structures 1998
- Simulation of a quantum-dot flash memory 1998
- Simulation of a single charge detector for quantum cellular automata 1998
- Coulomb breach effect emerging in shot noise 1999
- Detailed calculation of the vertical electric field in thin oxide MOSFETs 1999
- Modeling and manufacturability assessment of bistable quantum-dot cells 1999
- Operation of Quantum cellular automaton cells with more than two electrons 1999
- Evaluation of the effect of fabrication tolerances on the ground-state energy of electrostatically defined quantum dots 2000
- Monte Carlo simulation of electromigration in polycrystalline metal stripes 2000
- Shot noise partial suppression in the SILC regime 2000
- Simulation and measurement of shot noise in resonant tunneling structures 2000
- Simulation of electromigration in polycrystalline metal stripes 2000
- Suppressed shot noise in trap-assisted-tunneling of metal-oxide-capacitors 2000
- Thermal behavior of Quantum Cellular Automaton wires 2000
- Tuning of surface boundary conditions for the 3D simulation of gated heterostructures 2000
- A pipeline of associative memory boards for track finding 2001
- Characterization of soft breakdown in thin oxide NMOSFETs based on the analysis of the substrate current 2001
- Current noise at the oxide hard breakdown 2001
- Detection of quantum cellular automaton action in silicon-on-insulator cells 2001
- Noise as a probe of the charge transport mechanism through thin oxides in MOS structures 2001
- Performance assessment of adiabatic quantum cellular automata 2001
- Program, erase and retention times of thin-oxide Flash-EEPROMs 2001
- Proposed experiment to assess operation of quantum cellular automaton cells 2001
- Semiclassical simulation of quantum cellular automaton circuits 2001
- Status and perspectives of nanoscale device modelling 2001
- The fast tracker processor for hadron collider triggers 2001
- Three-dimensional simulation of nanocrystal Flash memories 2001
- Three-dimensional statistical modeling of the effects of the random distribution of dopants in deep sub-micron nMOSFETs 2001
- A three-dimensional solver of the Schrödinger equation in momentum space for the detailed simulation of nanostructures 2002
- Electronic properties of functional nanocrystal layers for non-volatile memory applications 2002
- Enhancement and suppression of shot noise in capacitively coupled metallic double dots 2002
- Experimental and theoretical investigation of quantum point contacts for the validation of models for surface states 2002
- Extraction of parameters of surface states from experimental test structures 2002
- Four-phase power clock generator for adiabatic logic circuits 2002
- Low frequency current noise in unstressed/stressed thin oxide metal-oxide-semiconductor capacitors 2002
- Modeling of Shallow Quantum Point Contacts Defined on AlGaAs/GaAs Heterostructures: The Effect of Surface States 2002
- Modeling of ballistic nanoscale metal-oxide-semiconductor field effect transistors 2002
- Modeling of trap assisted tunneling through thin dielectric layers 2002
- Modelling of self-organized InAs quantum dots embedded in an AlGaAs/GaAs heterostructure 2002
- Monte-Carlo Simulation of Clocked and Non-Clocked QCA Architectures 2002
- Numerical Investigation of Shot Noise Suppression in Chaotic Cavities 2002
- Numerical Investigation of Shot Noise between the Ballistic and the Diffusive Regime 2002
- On the role of interface states in low-voltage leakage currents of metal--oxide--semiconductor structures 2002
- Quantum confinement in silicon-germanium electron waveguides 2002
- Simulation of Transport and Noise Properties of SILCs Through Thin-Oxide MOS Structures 2002
- Simulation of failure time distributions of metal lines under electromigration 2002
- Simulation of time evolution of clocked and nonclocked quantum cellular automaton circuits 2002
- The effect of quantum confinement and discrete dopants in nanoscale 50 nm n-MOSFETs: a three-dimensional simulation 2002
- A QCA cell in silicon-on-insulator technology: theory and experiment 2003
- Analysis of shot-noise suppression in disordered quantum wires 2003
- Ballistic transport in SiGe and strained Si MOSFETs 2003
- Detailed numerical simulation of nanoelectronic devices 2003
- Modeling decoherence effects on the transport properties 2003
- NANOTCAD Project: Nanotechnology Computer Aided Design 2003
- NANOTCAD2D: Two-dimensional code for the simulation of nanoelectronic devices and structures 2003
- Noise in nanoelectronic devices 2003
- Numerical investigation of shot-noise suppression in diffusive conductors 2003
- Reduction of the energy consumption in adiabatic gates by optimal transistor sizing 2003
- Resonant 90 degree shifter generator for 4-phase trapezoidal 2003
- Resonant tunneling diodes: transport mechanism and circuit applications 2003
- Theory and Experiment of Suppressed Shot Noise in Stress-Induced Leakage Currents 2003
- ``Atomistic'', quantum and ballistic effects in nanoscale MOSFETs 2003
- A QCA cell in silicon-on-insulator technology: theory and experiment 2004
- Ballistic transport in nanoscale field effect transistors revealed by four-terminal DC characterization 2004
- Effect of Dephasing on the Current Statistics of Mesoscopic Devices 2004
- Extraction of the trap distribution responsible for SILCs in MOS structures from measurements and simulations of DC and noise properties 2004
- Hadron collider triggers with high-quality tracking at very high event rates 2004
- Hierarchical tools for the simulation of nanoscale circuits and devices: from artificial to real molecules 2004
- Modelling and simulation challenges for nanoscale MOSFETs in the ballistic limit 2004
- Statistical model of dephasing in mesoscopic devices introduced in the scattering matrix formalism 2004
- Two-dimensional hole precession in an all-semiconductor spin field effect transistor 2004
- Two-dimensional modeling of etched strained-silicon quantum wires 2004
- Analytical and Numerical Investigation of Noise in Nanoscale Ballistic Field Effect Transistors 2005
- Analytical model of the effects of a nonuniform distribution of stored charge on the electrical characteristics of discrete-trap nonvolatile memories 2005
- Code for the 3D simulation of nanoscale semiconductor devices, including drift-diffusion and ballistic transport in 1D and 2D subbands, and 3D tunneling 2005
- Dependence of the programming window of silicon-on-insulator nanocrystal memories on channel width 2005
- Design criteria for the RF section of UHF and I microwave passive RFID transponders 2005
- Detailed modeling of sub-100-nm MOSFETs based on Schrodinger DD per subband and experiments and evaluation of the performance gap to ballistic transport 2005
- Modelling and simulation of charging and discharging processes in nanocrystal flash memories during program and erase operations 2005
- Numerical simulation of ballistic magnetoconductance and magnetic focusing in strained Si-SiGe cavities 2005
- Perspectives and challenges in nanoscale device modeling 2005
- Physics-based compact model of nanoscale MOSFETs - Part I: Transition from drift-diffusion to ballistic transport 2005
- Physics-based compact model of nanoscale MOSFETs - Part II: Effects of degeneracy on transport 2005
- Rashba spin precession in quantum-Hall edge channels 2005
- Three-dimensional simulation of realistic single electron transistors 2005
- Three-dimensional simulation of the dependence of the programming window of SOI nanocrystal memories on the channel width 2005
- A three-dimensional simulation study of the performance of carbon nanotube field-effect transistors with doped reservoirs and realistic geometry 2006
- Analysis of shot noise suppression in mesoscopic cavities in a magnetic field 2006
- Channel noise modelling of nanoMOSFETs in a partially ballistic transport regime 2006
- Modeling and Simulation of Electron Devices 2006
- Silicon-on-insulator non-volatile memories with second-bit effect 2006
- Subthreshold behavior of dual-bit nonvolatile memories with very small regions of trapped charge 2006
- Ultra-Low-Power Series Voltage Regulator for Passive RFID Transponders with Subthreshold Logic 2006
- Ultra-low power PSK backscatter modulator for UHF and microwave RFID transponders 2006
- Ultra-low-power temperature compensated voltage reference generator 2006
- 3D simulation of a silicon quantum dot in a magnetic field based on current spin density functional theory 2007
- A Sub-1-V, 10 ppm/ oC, Nanopower Voltage Reference Generator 2007
- Comparison of Modeling Approaches for the Capacitance–Voltage and Current–Voltage Characteristics of Advanced Gate Stacks 2007
- Coupled Mode Space Approach for the Simulation of Realistic Carbon Nanotube Field-Effect Transistors 2007
- Direct Solution of the Boltzmann Transport Equation and Poisson–Schrödinger Equation for Nanoscale MOSFETs 2007
- Equivalent resistance and noise of cascaded mesoscopic cavities 2007
- Modeling of Tunnelling Currents in Hf-Based Gate Stacks as a Function of Temperature and Extraction of Material Parameters 2007
- Probing Pauli blocking with shot noise in resonant tunnelling diodes: Experiment and theory 2007
- Simulation of Graphene Nanoribbon Field-Effect Transistors 2007
- Three-Dimensional Simulation of One-Dimensional Transport in Silicon Nanowire Transistors 2007
- Hierarchical simulation of transport in silicon nanowire transistors 2008
- Low-voltage nanopower clock generator for RFID applications 2008
- Noise and reliability in simulated thin metal films 2008
- Performance Comparison of Graphene Nanoribbon FETs With Schottky Contacts and Doped Reservoirs 2008
- Study of Warm-Electron Injection in Double-Gate SONOS by Full-Band Monte Carlo Simulation 2008
- Three-dimensional simulations of quantum confinement and random dopants effects in nanoscale nMOSFETs 2008
- A Semianalytical Model of Bilayer-Graphene Field-Effect Transistor 2009
- A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs 2009
- Analytical Model of Nanowire FETs in a Partially Ballistic or Dissipative Transport Regime 2009
- Analytical model for the 1/f noise in the tunneling current through metal-oxide-semiconductor structures 2009
- Enhanced shot noise in carbon nanotube field-effect transistors 2009
- On the Possibility of Tunable-Gap Bilayer Graphene FET 2009
- Quantum analysis of shot noise suppression in a series of tunnel barriers 2009
- Shot Noise Suppression in Quasi-One-Dimensional Field-Effect Transistors 2009
- Time-dependent analysis of low VDD program operation in double-gate SONOS memories by full-band Monte Carlo simulation 2009
- Ultralow-Voltage Bilayer Graphene Tunnel FET 2009
- An energy case for hybrid datacenters 2010
- Analytical Model of One-Dimensional Carbon-Based Schottky-Barrier Transistors 2010
- Atomistic quantum transport modeling of metal-graphene nanoribbon heterojunctions 2010
- Effects due to backscattering and pseudogap features in graphene nanoribbons with single vacancies 2010
- Electric Field Control of Spin Rotation in Bilayer Graphene 2010
- Model and Performance Evaluation of Field-Effect Transistors Based on Epitaxial Graphene on SiC 2010
- Model of tunneling transistors based on graphene on SiC 2010
- Simulation of hydrogenated graphene field-effect transistors through a multiscale approach 2010
- Statistical Theory of shot noise in quasi-one-dimensional field-effect transistors in the presence of electron-electron interaction 2010
- A 2.6 nW, 0.45 V Temperature-Compensated Subthreshold CMOS Voltage Reference 2011
- A Backscattering Model Incorporating the Effective Carrier Temperature in Nano-MOSFET 2011
- A Microscopically Accurate Model of Partially Ballistic NanoMOSFETs in Saturation Based on Channel Backscattering 2011
- An Approach Based on Sensitivity Analysis for the Evaluation of Process Variability in Nanoscale MOSFETs 2011
- Analytical drain current model reproducing advanced transport models in nanoscale cylindrical surrounding-gate (SRG) MOSFETs 2011
- Atomistic Investigation of Low-Field Mobility in Graphene Nanoribbons 2011
- CMOS Silicon Physical Unclonable Functions Based on Intrinsic Process Variability 2011
- Compact drain-current model for reproducing advanced transport models in nanoscale double-gate MOSFETs 2011
- Strong mobility degradation in ideal graphene nanoribbons due to phonon scattering 2011
- Atti, Riassunti o Comunicazioni
- Shot-noise dependence on barrier symmetry in resonant tunneling diodes 1997
- Temperature dependence of shot noise in resonant tunneling structures 1997
- Theory of conductance and noise additivity in parallel mesoscopic conductors 1997
- Weak measurement and the traversal time problem 1997
- Configuration-interaction based simulation of a quantum cellular automaton cell 1998
- Modeling of a silicon quantum-dot flash memory 1998
- Modeling of a single charge detector based on a quantum point contact 1998
- Simulation and design of a single charge detector 1998
- The tree search processor for real-time track finding 1998
- Challenges in the simulation of logic gates and circuits based on the Quantum Cellular Automaton (QCA) concept 1999
- Monte-Carlo Simulation of Electromigration in Polycrystalline Metal Stripes 1999
- Origin of the Substrate Current after Soft-Breakdown in Thin Oxide n-MOSFETs 1999
- Quantum-Mechanical Simulation of Shot Noise in the Elastic Diffusive Regime 1999
- Signatures of electron-electron interaction in nanoelectronic device shot noise 1999
- Simulation of electromigration noise in polycrystalline metal stripes 1999
- Problems and perspectives in quantum-dot based computation 2000
- Problems and perspectives in quantum-dot based computation 2000
- Program, erase and retention times ofthin-oxide Flash-EEPROMs 2000
- Three-dimensional statistical modeling of the effects of the random distribution of dopants in deep sub-micron nMOSFETs 2000
- Detailed modeling of nanocrystal flash memories 2001
- Effects of quantum confinement and discrete dopants in nanoscale bulk Si MOSFETs 2001
- Effects of quantum confinement and discrete dopants in nanoscale bulk-Si nMOSFETs 2001
- Shot noise enhancement and suppression in systems of coupled quantum dots 2001
- Shot noise suppression in single and multiple ballistic and diffusive cavities 2001
- Towards Nanotechnology Computer Aided Design: the NANOTCAD Project 2001
- Variations of the Power Dissipation in Adiabatic Logic Gates 2001
- evaluation of performance and perspectives of nanocrystal Flash memories based on 3D quantum modeling 2001
- Adiabatic 4-bit Adders: Comparison of Performance 2002
- Adiabatic 4-bit Adders: Comparison of Performance and Robustness against Technology Parameter Variations 2002
- Ballistic modeling of 25 nm "Well tempered" MOSFETs 2002
- Evaluation of program, erase and retention times of Flash memories with very thin gate dielectric 2002
- Nanotcad two-dimensional simulator 2002
- Quantum and semiclassical modeling of threshold voltage dispersion due to random dopants in deep sub-micron MOSFETs 2002
- Schroedinger equation solver with open boundary conditions 2002
- Techniques and Methods for the Simulation of nanoscale ballistic MOSFETs 2002
- "Atomistic", quantum and ballisticeffects in sub-100nm "well tempered" MOSFET 2003
- Ballistic transport in SiGe and strained Si Mosfets 2003
- Challenges and solutions for numerical modeling of nanoMOSFETs 2003
- Concurrent effects of Pauli and Coulomb interaction in resonant tunneling diodes at low bias and low temperature 2003
- Mesoscopic Noise in VLSI Devices 2003
- Modeling End-of-The-Roadmap CMOS devices 2003
- Modeling decoherence effects on transport properties of mesoscopic devices 2003
- On the occurence of few electron phenomena in ultra-scaled Silicon nano-crystal memories 2003
- Reduction of the energy consumption in adiabatic gates by optimal transistor sizing 2003
- Shot noise in low-dimensional systems 2003
- Shot noise in nanoscale ballistic MOSFETs 2003
- Theoretical Analysis of shot noise suppression in chaotic cavity in the presence of a magnetic field 2003
- Towards the quantum simulation of nanoscale MOSFETs 2003
- Universal Rashba spin precession of holes and electrons 2003
- Analytical and numerical investigation of noise in nanoscale ballistic field effect transistors 2004
- Analytical model for the extraction of the trapped charge distribution in memories based on discrete storage nodes programmed via CHE injection 2004
- Ballistic transport in strained-Si cavities: experiment and theory 2004
- Code for the 3D simulation of nanoscale semiconductor devices, including drift-diffusion and ballistic transport in 1D and 2D subbands, and 3D tunneling 2004
- Comparison of strained silicon and bulk MOSFETs in the ballistic regime 2004
- Dependence of the programming window of SOI nanocrystal memories on the channel width 2004
- Design Criteria for the RF section of Long Range passive RFID Systems 2004
- Effective Bohm Quantum Potential for device simulators based on drift-diffusion and energy transport 2004
- Electrostatic effect of localised charge in dual bit memory cells with discrete traps 2004
- Modeling the effects of dephasing on mesoscopic noise 2004
- Perspectives and Challenges in nanoscale device modeling 2004
- Proposal of a physics-based compact model for nanoscale MOSFETs including the transition from drift-diffusion to ballistic transport 2004
- Shot noise in mesoscopic devices and quantum dot networks 2004
- Three-dimensional simulation of Single Electron Transistors 2004
- Universal signature of ballistic transport in nanoscale field effect transistors 2004
- Analytical Model for Nanowire and Nanotube Transistors covering both dissipative and ballistic transport 2005
- Analytical Treatment of far-from-equilibrium transport in low-dimensional MOSFETs 2005
- Experimental and theoretical analysis of scaling issues in dual-bit discrete trap non-volatile memories 2005
- Experimental and theoretical analysis of scaling issues in dual-bit discrete trap non-volatile memories 2005
- Extraction of physical parameters of alternative high-k gate stacks through comparison between measurements and quantum simulations 2005
- Modeling of suppressed shot noise in stress-induced leakage currents 2005
- Performance of carbon nanotube field effect transistors with doped source and drain extensions and arbitrary geometry 2005
- Shot noise behavior of cascaded mesoscopic structures 2005
- Simulation of one-dimensional subband transport in ultra-short silicon nanowire transistors 2005
- Three-dimensional atomistic simulation of Carbon nanotube FETs with realistic geometry 2005
- Time-dependent simulation of the program and erase operations of nanocrystal Flash memories 2005
- Transition between Pauli Exclusion and Coulomb Interaction in the Noise Behavior of Resonant Tunneling Diodes 2005
- Ultra low power RF section of a passive microwave RFID transponder in 0.35 micron BiCMOS 2005
- Ultra-low-power series voltage regulator for passive microwave RFID transponders 2005
- Ultra-low-power, temperature-compensated refererence voltage generator 2005
- A 300 nW, 12 ppm deg/C Voltage Reference in a Digital 0.35 micron CMOS Process 2006
- A Sub-1 V, 10 ppm/°C, Nanopower Voltage Reference Generator 2006
- Numerical Study of Weak Localization effects in disordered cavities 2006
- Threshold voltage dispersion and impurity scattering limited mobility in carbon nanotube field effect transistors with randomly doped reservoirs 2006
- Ultra-low-power flash memory in standard 0.35 micron CMOS for passive microwave RFID transponders 2006
- A 109 nW, 44 ppm°C CMOS Current Reference with Low Sensitivity to Process Variations 2007
- A Voltage Regulator for Subthreshold Logic 2007
- Advantages of the FinFET Architecture in SONOS and Nanocrystal Memory Devices 2007
- Low voltage hot-carrier programming of ultra-scaled SOI Finflash memories 2007
- Low-Voltage Low-Power CMOS Oscillator with Low Temperature and Process Sensitivity 2007
- Performance comparison of graphene nanoribbon schottky barrier and MOS FETs 2007
- Physical Insight on design of SONOS FinFETs programmed with channel tunneling 2007
- Physical Model for NAND operation in SOI and Body-Tied Nanocrystal FinFLASH memories 2007
- Tight-binding versus effective-mass modeling of carbon nanotube FETs 2007
- A model for MOS gate stack quality evaluation based on the gate current 1/f noise 2008
- An analytical investigation of bilayer graphene as material for electronics 2008
- CMOS unclonable system for secure authentication based on device variability 2008
- Effects of electron‐electron interaction on shot noise in quasi‐one dimensional conductors 2008
- Modeling the gate current 1/f noise and its application to advanced CMOS devices 2008
- Physical insights into the performance of MOSFETs based on silicon nanowires, carbon nanotubes, or graphene nanostripes 2008
- Shot noise in quasi one-dimensional FETs 2008
- Variability in novel device architectures 2008
- A software platform for nanoscale device simulation and visualization 2009
- Analytical and TCAD-supported Approach to Evaluate Intrinsic Process Variability in Nanoscale MOSFETs 2009
- Comparison of advanced transport models for nanoscale nMOSFETs 2009
- Effect of localization on the Fano factor of cascaded tunnel barriers 2009
- Numerical Analysis of transport properties of boron-doped graphene FETs 2009
- Performance analysis of graphene bilayer transistors through tight-binding simulations 2009
- Perspectives of graphene nanoelectronics: probing technological options with modeling 2009
- Physical Insights on Nanoscale FETs Based on Epitaxial Graphene on SiC 2009
- Physical insights on graphene nanoribbon mobility through atomistic simulations 2009
- Shot noise analysis in quasi one-dimensional field effect transistors 2009
- Silicon physical unclonable function resistant to a 1025-trial brute force attack in 90 nm CMOS 2009
- A multi-scale approach for performance assessment of hydrogenated graphene Field-Effect Transistors 2010
- Drain current computation in nanoscale nMOSFETs: Comparison of transport models 2010
- Enhanced shot noise in carbon nanotube FETs due to electron-hole interaction 2010
- Evaluation of threshold voltage dispersion in 45 nm CMOS technology with TCAD-based sensitivity analysis 2010
- Experimental extraction of barrier lowering and backscattering in saturated short-channel MOSFETs 2010
- Full band assessment of phonon-limited mobility in Graphene NanoRibbons 2010
- Graphene as a material for nanoelectronics 2010
- Multi-scale simulation of partially unzipped CNT hetero-junction Tunneling Field-Effect Transistor 2010
- Quantum transport modeling of Schottky junctions between metallic contacts and pure/defected graphene nanoribbons 2010
- Semi-analytical model for Schottky-barrier carbon nanotube and graphene nanoribbon transistors 2010
- Transport and noise properties of graphene-based transistors revealed through atomistic modelling 2010
- Analytical drain current model reproducing advanced transport models in nanoscale double-gate (DG) MOSFETs 2011
- Localization and shot noise in quantum nanostructures 2011
- Noise in graphene and carbon nanotube devices 2011
- Capitoli, Parte,Saggi, Studi, Articoli in libro
- Critical assessment of the QCA architecture as a viable alternative tolarge scale integration - Mesoscopic Tunneling Devices 2004
- Time-dependent Analysis of QCA Circuits with the Monte Carlo method - Quantum Cellular Automata: Theory, Experimentation, Prospects 2006
- Implementation of QCA Cells with SOI Technology - Quantum Cellular Automata: Theory, Experimentation, Prospects 2006
- Non-Invasive Charge Detectors - Quantum Cellular Automata: Theory, Experimentation, Prospects 2006
- Time-independent Simulation of QCA Circuits - Quantum Cellular Automata: Theory, Experimentation, Prospects 2006
- Implementation of QCA Cells in GaAs Technology - Quantum Cellular Automata: Theory, Experimentation, Prospects 2006
- Beyond CMOS - Beyond CMOS 2010
- Edizioni, Recensioni, Curatele, Voci enc