Autore
GIANLUCA FIORI
Unimap Dati autore
- Ricercatore Universitario presso Dipartimento di Ingegneria dell' Informazione: Elettronica, Informatica, Telecomunicazioni
- Membro della Facolta' di Ingegneria
- Settore scientifico disciplinare ING-INF/01 ELETTRONICA
- In servizio
Prodotti
- Articoli
- Experimental and theoretical investigation of quantum point contacts for the validation of models for surface states 2002
- Modeling of Shallow Quantum Point Contacts Defined on AlGaAs/GaAs Heterostructures: The Effect of Surface States 2002
- Modeling of ballistic nanoscale metal-oxide-semiconductor field effect transistors 2002
- The effect of quantum confinement and discrete dopants in nanoscale 50 nm n-MOSFETs: a three-dimensional simulation 2002
- Analysis of shot-noise suppression in disordered quantum wires 2003
- NANOTCAD Project: Nanotechnology Computer Aided Design 2003
- ``Atomistic'', quantum and ballistic effects in nanoscale MOSFETs 2003
- Modelling and simulation challenges for nanoscale MOSFETs in the ballistic limit 2004
- Code for the 3D simulation of nanoscale semiconductor devices, including drift-diffusion and ballistic transport in 1D and 2D subbands, and 3D tunneling 2005
- Dependence of the programming window of silicon-on-insulator nanocrystal memories on channel width 2005
- Three-dimensional simulation of realistic single electron transistors 2005
- Three-dimensional simulation of the dependence of the programming window of SOI nanocrystal memories on the channel width 2005
- A three-dimensional simulation study of the performance of carbon nanotube field-effect transistors with doped reservoirs and realistic geometry 2006
- Dependence of DC characteristics of CNT MOSFETs on bandstructure models 2006
- 3D simulation of a silicon quantum dot in a magnetic field based on current spin density functional theory 2007
- Comparison of Modeling Approaches for the Capacitance–Voltage and Current–Voltage Characteristics of Advanced Gate Stacks 2007
- Coupled Mode Space Approach for the Simulation of Realistic Carbon Nanotube Field-Effect Transistors 2007
- Simulation of Graphene Nanoribbon Field-Effect Transistors 2007
- Three-Dimensional Simulation of One-Dimensional Transport in Silicon Nanowire Transistors 2007
- Hierarchical simulation of transport in silicon nanowire transistors 2008
- Performance Comparison of Graphene Nanoribbon FETs With Schottky Contacts and Doped Reservoirs 2008
- Three-dimensional simulations of quantum confinement and random dopants effects in nanoscale nMOSFETs 2008
- A Semianalytical Model of Bilayer-Graphene Field-Effect Transistor 2009
- A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs 2009
- Enhanced shot noise in carbon nanotube field-effect transistors 2009
- On the Possibility of Tunable-Gap Bilayer Graphene FET 2009
- Shot Noise Suppression in Quasi-One-Dimensional Field-Effect Transistors 2009
- Ultralow-Voltage Bilayer Graphene Tunnel FET 2009
- Atomistic quantum transport modeling of metal-graphene nanoribbon heterojunctions 2010
- Effects due to backscattering and pseudogap features in graphene nanoribbons with single vacancies 2010
- Simulation of hydrogenated graphene field-effect transistors through a multiscale approach 2010
- Statistical Theory of shot noise in quasi-one-dimensional field-effect transistors in the presence of electron-electron interaction 2010
- Atomistic Investigation of Low-Field Mobility in Graphene Nanoribbons 2011
- Shot noise suppression in p-n junctions due to carrier generation-recombination 2011
- Strong mobility degradation in ideal graphene nanoribbons due to phonon scattering 2011
- Atti, Riassunti o Comunicazioni
- Effects of quantum confinement and discrete dopants in nanoscale bulk Si MOSFETs 2001
- Effects of quantum confinement and discrete dopants in nanoscale bulk-Si nMOSFET 2001
- Modeling of Quantum Point Contacts for the validation of models for surface states 2001
- Modeling of quantum point contacts for the validation of models for surface states 2001
- Modeling of shallow quantum point contacts defined on algaas/gaas heterostructures: the effect of surface states 2001
- Towards Nanotechnology Computer Aided Design: the NANOTCAD Project 2001
- Ballistic modeling of 25 nm "Well tempered" MOSFETs 2002
- Techniques and Methods for the Simulation of nanoscale ballistic MOSFETs 2002
- "Atomistic", quantum and ballisticeffects in sub-100nm "well tempered" MOSFET 2003
- Atomistic, quantum and ballistic effects in nanoscale MOSFETs 2003
- Challenges and solutions for numerical modeling of nanoMOSFETs 2003
- Modeling End-of-The-Roadmap CMOS devices 2003
- Schroedinger approach and density gradient model for quantum effects modelling 2003
- Code for the 3D simulation of nanoscale semiconductor devices, including drift-diffusion and ballistic transport in 1D and 2D subbands, and 3D tunneling 2004
- Dependence of the programming window of SOI nanocrystal memories on the channel width 2004
- Effective Bohm Quantum Potential for device simulators based on drift-diffusion and energy transport 2004
- Three-dimensional simulation of Single Electron Transistors 2004
- Performance of carbon nanotube field effect transistors with doped source and drain extensions and arbitrary geometry 2005
- Simulation of one-dimensional subband transport in ultra-short silicon nanowire transistors 2005
- Three-dimensional atomistic simulation of Carbon nanotube FETs with realistic geometry 2005
- 3D simulation of a silicon quantum dot in a magnetic field based on Current Spin Density Functional Theor 2006
- Coupled mode space vs real space approach for the simulation of CNT-FETs 2006
- Threshold voltage dispersion and impurity scattering limited mobility in carbon nanotube field effect transistors with randomly doped reservoirs 2006
- MESFET cryogenic front-end for cross-correlation noise measurements 2007
- Performance comparison of graphene nanoribbon schottky barrier and MOS FETs 2007
- Tight-binding versus effective-mass modeling of carbon nanotube FETs 2007
- An analytical investigation of bilayer graphene as material for electronics 2008
- Effects of electron‐electron interaction on shot noise in quasi‐one dimensional conductors 2008
- Modeling C-based nanotransistors 2008
- Shot noise in quasi one-dimensional FETs 2008
- Comparison of advanced transport models for nanoscale nMOSFETs 2009
- Numerical Analysis of transport properties of boron-doped graphene FETs 2009
- Performance analysis of graphene bilayer transistors through tight-binding simulations 2009
- Perspectives of graphene nanoelectronics: probing technological options with modeling 2009
- Physical insights on graphene nanoribbon mobility through atomistic simulations 2009
- Shot noise analysis in quasi one-dimensional field effect transistors 2009
- Shot noise suppression in p-n junctions due to carrier recombination 2009
- A multi-scale approach for performance assessment of hydrogenated graphene Field-Effect Transistors 2010
- Drain current computation in nanoscale nMOSFETs: Comparison of transport models 2010
- Enhanced shot noise in carbon nanotube FETs due to electron-hole interaction 2010
- Full band assessment of phonon-limited mobility in Graphene NanoRibbons 2010
- Graphene as a material for nanoelectronics 2010
- Multi-scale simulation of partially unzipped CNT hetero-junction Tunneling Field-Effect Transistor 2010
- Quantum transport modeling of Schottky junctions between metallic contacts and pure/defected graphene nanoribbons 2010
- Semi-analytical model for Schottky-barrier carbon nanotube and graphene nanoribbon transistors 2010
- Transport and noise properties of graphene-based transistors revealed through atomistic modelling 2010
- Noise in graphene and carbon nanotube devices 2011
- Capitoli, Parte,Saggi, Studi, Articoli in libro