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Autore

GIUSEPPE IANNACCONE

Unimap Dati autore

• Professore Associato presso Dipartimento di Ingegneria dell' Informazione: Elettronica, Informatica, Telecomunicazioni
• Membro della Facolta' di Ingegneria
• Settore scientifico disciplinare ING-INF/01 ELETTRONICA
• In servizio

Prodotti

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• Articolo in rivista

  1. J. R. Barker, S. Brouard, V. Gasparian, G. Iannaccone, A.P. Jauho, C. R. Leavens, J. G. Muga, R. Sala, D. Sokolovski,Report on the First European Workshop on Tunneling Times, Phantoms Newsletter,vol. -,num. 7,pp 5,tot.pag 6,1994
  2. G. Fiori, G. Iannaccone, M. Macucci,Modeling of Shallow Quantum Point Contacts Defined on AlGaAs/GaAs Heterostructures: The Effect of Surface States, Journal of Computational Electronics,vol. 1,num. 1-2,pp 39-42,tot.pag 4,2002
  3. L. Bonci, M. Gattobigio, G. Iannaccone, M. Macucci,Monte-Carlo Simulation of Clocked and Non-Clocked QCA Architectures, Journal of Computational Electronics,vol. 1,num. 1-2,pp 49-53,tot.pag 5,2002
  4. M. Macucci, G. Iannaccone, B. Pellegrini,Numerical Investigation of Shot Noise between the Ballistic and the Diffusive Regime, Journal of Computational Electronics,vol. 1,num. 1-2,pp 99-102,tot.pag 4,2002
  5. P. Marconcini, M. Macucci, G. Iannaccone, B. Pellegrini,Numerical Investigation of Shot Noise Suppression in Chaotic Cavities, Phantoms Newsletter,vol. -,num. 7/8,pp 17-20,tot.pag 4,2002
  6. G. Iannaccone, M. Macucci,Simulation of Transport and Noise Properties of SILCs Through Thin-Oxide MOS Structures, Journal of Computational Electronics,vol. 1,num. 3,pp 381-384,tot.pag 4,2002
  7. G. Fiori, G. Iannaccone,``Atomistic'', quantum and ballistic effects in nanoscale MOSFETs, Journal of Computational Electronics,vol. 2,num. 2,pp 123-126,tot.pag 4,2003
  8. G. Iannaccone,Resonant tunneling diodes: transport mechanism and circuit applications, Nano et Micro Technologies,vol. 3,num. 1-2,pp 127-132,tot.pag 6,2003
  9. G. Iannaccone, M. Burghard, P. Coli, G. Curatola, P. Delaney, G. Fiori, A. Forchel, J. Greer, F. Heinz, H. Kosina, M. Macucci, M. Nedjalkov, M. Pala, S. Reitzenstein, A. Schenk, A. Schliemann, R. Sordan, L.Worschech,NANOTCAD Project: Nanotechnology Computer Aided Design, Phantoms Newsletter,vol. -,num. 14,pp 4-10,tot.pag 7,2003
  10. G. Iannaccone,Noise in nanoelectronic devices, Nano et Micro Technologies,vol. 3,num. 1-2,pp 143-154,tot.pag 12,2003
  11. G. Iannaccone,Detailed numerical simulation of nanoelectronic devices, Nano et Micro Technologies,vol. 3,num. 1-2,pp 133-142,tot.pag 10,2003
  12. A. Bargagli-Stoffi, E. Amirante, J. Fischer, G. Iannaccone, D. Schmitt-Landsiedel,Resonant 90 degree shifter generator for 4-phase trapezoidal, Advances in Radio Sciences,vol. 1,pp 243-246,tot.pag 4,2003
  13. M. G. Pala, G. Iannaccone,Modeling decoherence effects on the transport properties, Journal of Computational Electronics,vol. 2,num. 2,pp 399-402,tot.pag 4,2003
  14. G. Curatola, G. Iannaccone,Ballistic transport in SiGe and strained Si MOSFETs, Journal of Computational Electronics,vol. 2,num. 2,pp 315-318,tot.pag 4,2003
  15. G. Fiori, G. Iannaccone,Code for the 3D simulation of nanoscale semiconductor devices, including drift-diffusion and ballistic transport in 1D and 2D subbands, and 3D tunneling, Journal of Computational Electronics,vol. 4,num. 1/2,pp 63-66,tot.pag 4,2005
  16. G. Iannaccone,Analytical and Numerical Investigation of Noise in Nanoscale Ballistic Field Effect Transistors, Journal of Computational Electronics,vol. 3,num. 3/4,pp 199-202,tot.pag 4,2005
  17. G. Iannaccone,Modeling and Simulation of Electron Devices, Journal of Computational Electronics,vol. 5,num. 2,pp 69-70,tot.pag 2,2006
  18. G. Mugnaini, G. Iannaccone,Channel noise modelling of nanoMOSFETs in a partially ballistic transport regime, Journal of Computational Electronics,vol. 5,num. 2,pp 91-95,tot.pag 5,2006
  19. L. Perniola, G. Iannaccone,Silicon-on-insulator non-volatile memories with second-bit effect, Journal of Computational Electronics,vol. 5,num. 3,pp 137-142,tot.pag 6,2006
  20. MARCONCINI PAOLO, FIORI GIANLUCA, MACUCCI MASSIMO, IANNACCONE GIUSEPPE,Hierarchical simulation of transport in silicon nanowire transistors, JOURNAL OF COMPUTATIONAL ELECTRONICS,vol. 7/3,pp 415,tot.pag 4,tot. autori 4,2008
• 
  

  Articolo su rivista scientifica Index Medicus, Science Citation Index

  1. G. Iannaccone, B. Pellegrini,Characteristic times in the motion of a particle, PHYSICAL REVIEW B,vol. 49,num. 2,pp 16548,tot.pag 13,1994
  2. G. Iannaccone, B. Pellegrini,Approaches to the tunneling time based on the Larmor clock and particle absorption as particular cases of the stay-time method, PHYSICAL REVIEW B,vol. 50,num. 19,pp 14659,tot.pag 4,1994
  3. C. R. Leavens, G. Iannaccone, W. R. Mc Kinnon,On the approach to the stationary-state-scattering limit within Bohmian mechanics, PHYSICS LETTERS A,vol. 208,num. 1-2,pp 17,tot.pag 8,1995
  4. P. Ciambrone, M. Macucci, G. Iannaccone, B. Pellegrini, L. Sorba, M. Lazzarino, F. Beltram,Noise measurements in resonant tunnelling structures as a function of current and temperature, ELECTRONICS LETTERS,vol. 31,num. 6,pp 503,tot.pag 3,1995
  5. G. Iannaccone,General relation between density of states and dwell times in mesoscopic systems, PHYSICAL REVIEW B,vol. 51,num. 7,pp 4727,tot.pag 3,1995
  6. G. Iannaccone, B. Pellegrini,Unified approach to electron transport in double-barrier structures, PHYSICAL REVIEW B,vol. 52,num. 24,pp 17406,tot.pag 7,1995
  7. G. Iannaccone, B. Pellegrini,Compact formula for the density of states in a quantum well, PHYSICAL REVIEW B,vol. 52,num. -,pp 17406,tot.pag 6,1996
  8. G. Iannaccone, M. Macucci, B. Pellegrini,Theory of Conductance and noise additivity in parallel mesoscopic conductors, PHYSICAL REVIEW B,vol. 56,num. -,pp 12104,tot.pag 6,1997
  9. G. Iannaccone, M. Macucci, B. Pellegrini,Shot noise in resonant tunneling structures, PHYSICAL REVIEW B,vol. 55,num. -,pp 4539,tot.pag 12,1997
  10. G. Iannaccone, A. Trellakis, U. Ravaioli,Simulation of a quantum-dot flash memory, JOURNAL OF APPLIED PHYSICS,vol. 84,num. -,pp 5032,tot.pag 6,1998
  11. G. Iannaccone, G. Lombardi, M. Macucci, B. Pellegrini,Enhanced shot noise in resonant tunneling: theory and experiment, PHYSICAL REVIEW LETTERS,vol. 80,num. -,pp 1054,tot.pag 4,1998
  12. G. Iannaccone, C. Ungarelli, M. Macucci, E. Amirante, M. Governale,Simulation of a single charge detector for quantum cellular automata, THIN SOLID FILMS,vol. 336,num. -,pp 145,tot.pag 6,1998
  13. G. Iannaccone, M. Macucci, B. Pellegrini,Modeling of shot noise in resonant tunneling structures, VLSI DESIGN,vol. 8,num. -,pp 449,tot.pag 5,1998
  14. G. Iannaccone, G. Lombardi, M. Macucci, B. Pellegrini,Coulomb breach effect emerging in shot noise, NANOTECHNOLOGY,vol. 10,num. -,pp 97,tot.pag 5,1999
  15. M. Governale, M. Macucci, G. Iannaccone, C. Ungarelli,Modeling and manufacturability assessment of bistable quantum-dot cells, JOURNAL OF APPLIED PHYSICS,vol. 85,num. -,pp 2962,tot.pag 13,1999
  16. M. Girlanda, M. Governale, M. Macucci, G. Iannaccone,Operation of Quantum cellular automaton cells with more than two electrons, APPLIED PHYSICS LETTERS,vol. 75,num. -,pp 3198,tot.pag 3,1999
  17. S. Gennai, G. Iannaccone,Detailed calculation of the vertical electric field in thin oxide MOSFETs, ELECTRONICS LETTERS,vol. 35,num. -,pp 1881,tot.pag 3,1999
  18. G. Iannaccone, F. Crupi, B. Neri, S. Lombardo,Suppressed shot noise in trap-assisted-tunneling of metal-oxide-capacitors, APPLIED PHYSICS LETTERS,vol. 77,num. -,pp 2876,tot.pag 3,2000
  19. F. Crupi, G. Iannaccone, B. Neri, C. Ciofi, S. Lombardo,Shot noise partial suppression in the SILC regime, MICROELECTRONICS RELIABILITY,vol. 40,num. -,pp 1605,tot.pag 4,2000
  20. S. Di Pascoli, G. Iannaccone,Simulation of electromigration in polycrystalline metal stripes, MICROELECTRONICS RELIABILITY,vol. 40,num. -,pp 1955,tot.pag 4,2000
  21. M. Macucci, G. Iannaccone, C. Vieu, H. Launois, Y. Jin,Evaluation of the effect of fabrication tolerances on the ground-state energy of electrostatically defined quantum dots, SUPERLATTICES AND MICROSTRUCTURES,vol. 27,num. -,pp 359,tot.pag 4,2000
  22. G. Iannaccone, M. Macucci, E. Amirante, Y. Jin, H. Launois, C. Vieu,Tuning of surface boundary conditions for the 3D simulation of gated heterostructures, SUPERLATTICES AND MICROSTRUCTURES,vol. 27,num. -,pp 369,tot.pag 4,2000
  23. S. Di Pascoli, G. Iannaccone,Monte Carlo simulation of electromigration in polycrystalline metal stripes, SEMICONDUCTOR SCIENCE AND TECHNOLOGY,vol. 15,num. -,pp 608,tot.pag 5,2000
  24. G. Iannaccone, G. Lombardi, M. Macucci, C. Ciofi, B. Pellegrini,Simulation and measurement of shot noise in resonant tunneling structures, ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING,vol. 24,num. -,pp 73,tot.pag 6,2000
  25. C. Ungarelli, S. Francaviglia, M. Macucci, G. Iannaccone,Thermal behavior of Quantum Cellular Automaton wires, JOURNAL OF APPLIED PHYSICS,vol. 87,num. -,pp 7320,tot.pag 6,2000
  26. F. Crupi, C. Ciofi, C. Pace, G. Iannaccone, B. Neri,Noise as a probe of the charge transport mechanism through thin oxides in MOS structures, Fluctuation and Noise letters,vol. 1,num. 2,pp L61,tot.pag 4,2001
  27. E. Amirante, G. Iannaccone, B. Pellegrini,Three-dimensional statistical modeling of the effects of the random distribution of dopants in deep sub-micron nMOSFETs, VLSI DESIGN,vol. 13,num. 1-4,pp 425-429,tot.pag 5,2001
  28. G. Iannaccone, S. Gennai,Program, erase and retention times of thin-oxide Flash-EEPROMs, VLSI DESIGN,vol. 13,num. 1-4,pp 431-434,tot.pag 4,2001
  29. A. Annovi, M.G. Bagliesi, A. Bardi, R. Carosi, M. Dell,A pipeline of associative memory boards for track finding, IEEE TRANSACTIONS ON NUCLEAR SCIENCE,vol. 48,num. 3,pp 595,tot.pag 6,2001
  30. A. Annovi, M.G. Bagliesi, A. Bardi, R. Carosi, M. Dell,The fast tracker processor for hadron collider triggers, IEEE TRANSACTIONS ON NUCLEAR SCIENCE,vol. 48,num. 3,pp 575,tot.pag 6,2001
  31. M. Gattobigio, M. Macucci, G. Iannaccone,Detection of quantum cellular automaton action in silicon-on-insulator cells, VLSI DESIGN,vol. 13,num. 1-4,pp 419-424,tot.pag 6,2001
  32. M. Macucci, G. Iannaccone, S. Francaviglia, B. Pellegrini,Semiclassical simulation of quantum cellular automaton circuits, INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS,vol. 29,num. -,pp 37,tot.pag 11,2001
  33. L. Bonci, G. Iannaccone, M. Macucci,Performance assessment of adiabatic quantum cellular automata, JOURNAL OF APPLIED PHYSICS,vol. 89,num. 11,pp 6435,tot.pag 9,2001
  34. M. Macucci, G. Iannaccone, J. Greer, J. Martorell, D. W. L. Sprung, A. Schenk, I. I. Yakimenko, K.-F. Berggren, K. Stokbro and N. Gippius,Status and perspectives of nanoscale device modelling, NANOTECHNOLOGY,vol. 12,pp 136,tot.pag 7,2001
  35. F. Crupi, G. Iannaccone, I. Crupi, R. Degraeve, G. Groeseneken, H. E. Maes,,Characterization of soft breakdown in thin oxide NMOSFETs based on the analysis of the substrate current, IEEE TRANSACTIONS ON ELECTRON DEVICES,vol. 48,num. 6,pp 1109,tot.pag 5,2001
  36. G. Iannaccone, P. Coli,Three-dimensional simulation of nanocrystal Flash memories, APPLIED PHYSICS LETTERS,vol. 78,num. 14,pp 2046,tot.pag 3,2001
  37. F. Crupi, G. Iannaccone, B. Neri, S. Lombardo, C. Ciofi,Current noise at the oxide hard breakdown, MICROELECTRONIC ENGINEERING,vol. 59/1-4,pp 43,tot.pag 5,2001
  38. M. Macucci, M. Gattobigio, G. Iannaccone,,Proposed experiment to assess operation of quantum cellular automaton cells, JOURNAL OF APPLIED PHYSICS,vol. 17,num. 45,pp 261-266,tot.pag 6,2001
  39. G. Fiori, G. Iannaccone,Modeling of ballistic nanoscale metal-oxide-semiconductor field effect transistors, APPLIED PHYSICS LETTERS,vol. 81,num. 19,pp 3672-3674,tot.pag 3,2002
  40. G. Fiori, G. Iannaccone,The effect of quantum confinement and discrete dopants in nanoscale 50 nm n-MOSFETs: a three-dimensional simulation, NANOTECHNOLOGY,vol. 13,num. 3,pp 294-298,tot.pag 5,2002
  41. M. G. Pala, G. Iannaccone, S. Kaiser, A. Schliemann, L. Worschech and A. Forchel,Extraction of parameters of surface states from experimental test structures, NANOTECHNOLOGY,vol. 13,num. 3,pp 373-377,tot.pag 5,2002
  42. M. G. Pala, G. Iannaccone,A three-dimensional solver of the Schrödinger equation in momentum space for the detailed simulation of nanostructures, NANOTECHNOLOGY,vol. 13,num. 3,pp 369-372,tot.pag 4,2002
  43. G. Curatola, G. Iannaccone,Quantum confinement in silicon-germanium electron waveguides, NANOTECHNOLOGY,vol. 13,num. 3,pp 267-273,tot.pag 7,2002
  44. F. Crupi, C. Ciofi, A. Germanò, G. Iannaccone, J. H. Stathis, and S. Lombardo,On the role of interface states in low-voltage leakage currents of metal--oxide--semiconductor structures, APPLIED PHYSICS LETTERS,vol. 80,num. 24,pp 4597-4599,tot.pag 3,2002
  45. G. Fiori, G. Iannaccone, M. Macucci, S. Reitzenstein, S. Kaiser, M. Kesselring, L. Worschech, A. Forchel,Experimental and theoretical investigation of quantum point contacts for the validation of models for surface states, NANOTECHNOLOGY,vol. 13,num. -,pp 299-303,tot.pag 5,2002
  46. M. Gattobigio, G. Iannaccone, M. Macucci,Enhancement and suppression of shot noise in capacitively coupled metallic double dots, PHYSICAL REVIEW B,vol. 65,pp 115337-1-115337-8,tot.pag 8,2002
  47. P. Coli, G. Iannaccone,Modelling of self-organized InAs quantum dots embedded in an AlGaAs/GaAs heterostructure, NANOTECHNOLOGY,vol. 13,num. -,pp 263-266,tot.pag 4,2002
  48. L. Bonci, M. Gattobigio, G. Iannaccone, and M. Macucci,Simulation of time evolution of clocked and nonclocked quantum cellular automaton circuits, JOURNAL OF APPLIED PHYSICS,vol. 92,num. 6,pp 3169-3178,tot.pag 10,2002
  49. F. Crupi, G. Iannaccone, C. Ciofi, B. Neri, S. Lombardo and C. Pace,Low frequency current noise in unstressed/stressed thin oxide metal-oxide-semiconductor capacitors, SOLID-STATE ELECTRONICS,vol. 46,num. 11,pp 1807-1813,tot.pag 7,2002
  50. M.R. Carriero, S. Di Pascoli, G. Iannaccone,Simulation of failure time distributions of metal lines under electromigration, MICROELECTRONICS RELIABILITY,vol. 42,num. 9-11,pp 1469-1472,tot.pag 4,2002
  51. G. Iannaccone,Modeling of trap assisted tunneling through thin dielectric layers, MATERIALS SCIENCE AND TECHNOLOGY,vol. 18,num. 7,pp 736-738,tot.pag 3,2002
  52. P. Coli, G. Iannaccone,Electronic properties of functional nanocrystal layers for non-volatile memory applications, MATERIALS SCIENCE AND TECHNOLOGY,vol. 18,num. 7,pp 733-735,tot.pag 3,2002
  53. A. Bargagli-Stoffi, G. Iannaccone, S. Di Pascoli, E. Amirante, D. Schmitt-Landsiedel,Four-phase power clock generator for adiabatic logic circuits, ELECTRONICS LETTERS,vol. 38,num. 14,pp 689-691,tot.pag 3,2002
  54. M. Macucci, G. Iannaccone, G. Basso, B. Pellegrini,Numerical investigation of shot-noise suppression in diffusive conductors, PHYSICAL REVIEW B,vol. 67,num. 11,pp 115339-115345,tot.pag 7,2003
  55. G. Iannaccone, F. Crupi, B. Neri, S. Lombardo,Theory and Experiment of Suppressed Shot Noise in Stress-Induced Leakage Currents, IEEE TRANSACTIONS ON ELECTRON DEVICES,vol. 50,num. 5,pp 1363-1369,tot.pag 7,2003
  56. L. Bonci, G. Fiori, M. Macucci, G. Iannaccone, S. Roddaro, P. Pingue, V. Piazza, M. Cecchini and F. Beltram,Analysis of shot-noise suppression in disordered quantum wires, PHYSICA E,vol. 19,num. 1-2,pp 107-111,tot.pag 5,2003
  57. J. Fischer, E. Amirante, F. Randazzo, G. Iannaccone, D. Schmitt-Landsiedel,Reduction of the energy consumption in adiabatic gates by optimal transistor sizing, LECTURE NOTES IN COMPUTER SCIENCE,vol. 2799,pp 309-318,tot.pag 10,2003
  58. G. Curatola, G. Iannaccone,NANOTCAD2D: Two-dimensional code for the simulation of nanoelectronic devices and structures, COMPUTATIONAL MATERIALS SCIENCE,vol. 28,num. 2,pp 342-352,tot.pag 11,2003
  59. M. Macucci, M. Gattobigio, L. Bonci, G. Iannaccone, F. E. Prins, C. Single, G. Wetekam and D. P. Kern,A QCA cell in silicon-on-insulator technology: theory and experiment, SUPERLATTICES AND MICROSTRUCTURES,vol. 34,num. 3-6,pp 205-211,tot.pag 7,2003
  60. Lukas Worschech, Andreas Schliemann, Heart Hsin, Alfred Forchel, Gilberto Curatola and Giuseppe Iannaccone,Ballistic transport in nanoscale field effect transistors revealed by four-terminal DC characterization, SUPERLATTICES AND MICROSTRUCTURES,vol. 34,num. 3-6,pp 271-275,tot.pag 5,2004
  61. A. Nannipieri, G. Iannaccone, F. Crupi,Extraction of the trap distribution responsible for SILCs in MOS structures from measurements and simulations of DC and noise properties, MICROELECTRONICS RELIABILITY,vol. 44,pp 1497-1501,tot.pag 5,2004
  62. M. Macucci, M. Gattobigio, L. Bonci, G. Iannaccone, F. E. Prins, C. Single, G. Wetekam and D. P. Kern,A QCA cell in silicon-on-insulator technology: theory and experiment, SUPERLATTICES AND MICROSTRUCTURES,vol. 34,num. 3-6,pp 205-211,tot.pag 7,2004
  63. G. Curatola, G. Iannaccone,Two-dimensional modeling of etched strained-silicon quantum wires, JOURNAL OF APPLIED PHYSICS,vol. 95,num. 3,pp 1251-1257,tot.pag 7,2004
  64. M. G. Pala, G. Iannaccone,Statistical model of dephasing in mesoscopic devices introduced in the scattering matrix formalism, PHYSICAL REVIEW B,vol. 69,pp 235304-1-235304-5,tot.pag 5,2004
  65. Marco G. Pala, Giuseppe Iannaccone,Effect of Dephasing on the Current Statistics of Mesoscopic Devices, PHYSICAL REVIEW LETTERS,vol. 93,pp 256803-1-256803-4,tot.pag 4,2004
  66. M. Macucci, G. Iannaccone, L. Bonci, M. Girlanda,Hierarchical tools for the simulation of nanoscale circuits and devices: from artificial to real molecules, IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS,vol. 151,num. 5,pp 473-479,tot.pag 7,2004
  67. Annovi A, Bardi A, Campanelli M, Carosi R, Catastini P, Cavasinni V, Cerri A, Clark A, Dell,Hadron collider triggers with high-quality tracking at very high event rates, IEEE TRANSACTIONS ON NUCLEAR SCIENCE,vol. 51,num. 3,pp 391-400,tot.pag 10,2004
  68. G. Curatola, G. Fiori, G. Iannaccone,Modelling and simulation challenges for nanoscale MOSFETs in the ballistic limit, SOLID-STATE ELECTRONICS,vol. 48,num. 4,pp 581-587,tot.pag 7,2004
  69. Marco G. Pala, Michele Governale, Jürgen König, Ulrich Zülicke, and Giuseppe Iannaccone,Two-dimensional hole precession in an all-semiconductor spin field effect transistor, PHYSICAL REVIEW B,vol. 69,pp 0453041-0453049,tot.pag 9,2004
  70. L. Perniola, S. Bernardini, G. Iannaccone, P. Masson, B. De Salvo, G. Ghibaudo, C. Gerardi,Analytical model of the effects of a nonuniform distribution of stored charge on the electrical characteristics of discrete-trap nonvolatile memories, IEEE Transactions on Nanotechnology,vol. 4,num. 3,pp 360-368,tot.pag 9,2005
  71. A. Campera, G. Iannaccone,Modelling and simulation of charging and discharging processes in nanocrystal flash memories during program and erase operations, SOLID-STATE ELECTRONICS,vol. 49,num. 11,pp 1745-1753,tot.pag 9,2005
  72. G. Fiori, G. Iannaccone, G. Molas, B. De Salvo,Dependence of the programming window of silicon-on-insulator nanocrystal memories on channel width, APPLIED PHYSICS LETTERS,vol. 86,num. 11,pp 113502-1-113502-3,tot.pag 3,2005
  73. M. G. Pala, M. Governale, U. Zulicke, G. Iannaccone,Rashba spin precession in quantum-Hall edge channels, PHYSICAL REVIEW B,vol. 71,num. 11,pp 115306-1-115306-6,tot.pag 6,2005
  74. M.G. Pala, G. Iannaccone, G. Curatola,Numerical simulation of ballistic magnetoconductance and magnetic focusing in strained Si-SiGe cavities, NANOTECHNOLOGY,vol. 16,num. 5,pp S206-S210,tot.pag 5,2005
  75. G. Fiori, G. Iannaccone, G. Molas, B. De Salvo,Three-dimensional simulation of the dependence of the programming window of SOI nanocrystal memories on the channel width, IEEE Transactions on Nanotechnology,vol. 4,num. 3,pp 326-330,tot.pag 5,2005
  76. G. Fiori, M. G. Pala, G. Iannaccone,Three-dimensional simulation of realistic single electron transistors, IEEE Transactions on Nanotechnology,vol. 4,num. 4,pp 415-421,tot.pag 7,2005
  77. G. Curatola, G. Doornbos, J. Loo, Y.V. Ponomarev, G. Iannaccone,Detailed modeling of sub-100-nm MOSFETs based on Schrodinger DD per subband and experiments and evaluation of the performance gap to ballistic transport, IEEE TRANSACTIONS ON ELECTRON DEVICES,vol. 52,num. 8,pp 1851-1858,tot.pag 8,2005
  78. G. Mugnaini, G. Iannaccone,Physics-based compact model of nanoscale MOSFETs - Part II: Effects of degeneracy on transport, IEEE TRANSACTIONS ON ELECTRON DEVICES,vol. 52,num. 8,pp 1802-1806,tot.pag 5,2005
  79. G. Iannaccone,Perspectives and challenges in nanoscale device modeling, MICROELECTRONICS JOURNAL,vol. 36,num. 7,pp 614-618,tot.pag 5,2005
  80. G. Mugnaini, G. Iannaccone,Physics-based compact model of nanoscale MOSFETs - Part I: Transition from drift-diffusion to ballistic transport, IEEE TRANSACTIONS ON ELECTRON DEVICES,vol. 52,num. 8,pp 1795-1801,tot.pag 7,2005
  81. G. De Vita, G. Iannaccone,Design criteria for the RF section of UHF and I microwave passive RFID transponders, IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES,vol. 53,num. 9,pp 2978-2990,tot.pag 13,2005
  82. G. De Vita, G. Iannaccone,Ultra-Low-Power Series Voltage Regulator for Passive RFID Transponders with Subthreshold Logic, ELECTRONICS LETTERS,vol. 42,num. 23,pp 1350-1352,tot.pag 3,2006
  83. G. De Vita, G. Iannaccone,Ultra-low-power temperature compensated voltage reference generator, MICROELECTRONICS JOURNAL,vol. 37,num. 10,pp 1072-1079,tot.pag 8,2006
  84. G. De Vita, F. Bellatalla, G. Iannaccone,Ultra-low power PSK backscatter modulator for UHF and microwave RFID transponders, MICROELECTRONICS JOURNAL,vol. 37,num. 7,pp 627-629,tot.pag 3,2006
  85. L. Perniola, G. Iannaccone, G. Ghibaudo,Subthreshold behavior of dual-bit nonvolatile memories with very small regions of trapped charge, IEEE Transactions on Nanotechnology,vol. 5,num. 4,pp 373-378,tot.pag 6,2006
  86. G. Fiori, G. Iannaccone, G. Klimeck,A three-dimensional simulation study of the performance of carbon nanotube field-effect transistors with doped reservoirs and realistic geometry, IEEE TRANSACTIONS ON ELECTRON DEVICES,vol. 53,num. 8,pp 1782-1788,tot.pag 7,2006
  87. P. Marconcini, M. Macucci, G. Iannaccone, B. Pellegrini, G. Marola,Analysis of shot noise suppression in mesoscopic cavities in a magnetic field, EUROPHYSICS LETTERS,vol. 73,num. 4,pp 574-580,tot.pag 7,2006
  88. IANNACCONE GIUSEPPE, Curatola G., Scaldaferri S.,Direct Solution of the Boltzmann Transport Equation and Poisson–Schrödinger Equation for Nanoscale MOSFETs, I E E E TRANSACTIONS ON ELECTRON DEVICES,vol. 54/11,pp 2901,tot.pag 9,tot. autori 3,2007
  89. IANNACCONE GIUSEPPE, FIORI GIANLUCA,Three-Dimensional Simulation of One-Dimensional Transport in Silicon Nanowire Transistors, IEEE TRANSACTIONS ON NANOTECHNOLOGY,vol. 6,pp 524,tot.pag 6,tot. autori 2,2007
  90. De vita Giuseppe, IANNACCONE GIUSEPPE,A Sub-1-V, 10 ppm/ oC, Nanopower Voltage Reference Generator, IEEE JOURNAL OF SOLID-STATE CIRCUITS,vol. 42,pp 1536,tot.pag 7,tot. autori 2,2007
  91. FIORI GIANLUCA, IANNACCONE GIUSEPPE,Simulation of Graphene Nanoribbon Field-Effect Transistors, IEEE ELECTRON DEVICE LETTERS,vol. 28,pp 760,tot.pag 3,tot. autori 2,2007
  92. FIORI GIANLUCA, IANNACCONE GIUSEPPE, Klimeck Gerhard,Coupled Mode Space Approach for the Simulation of Realistic Carbon Nanotube Field-Effect Transistors, IEEE TRANSACTIONS ON NANOTECHNOLOGY,vol. 6,pp 475,tot.pag 6,tot. autori 3,2007
  93. Lisieri Michele, IANNACCONE GIUSEPPE, FIORI GIANLUCA,3D simulation of a silicon quantum dot in a magnetic field based on current spin density functional theory, JOURNAL OF COMPUTATIONAL ELECTRONICS,vol. 6,pp 191,tot.pag 4,tot. autori 3,2007
  94. MAIONE IVAN-ALESSIO, MACUCCI MASSIMO, IANNACCONE GIUSEPPE, BASSO GIOVANNI, PELLEGRINI BRUNO, Lazzarino L, Sorba Lucia, Beltram Fabio,Probing Pauli blocking with shot noise in resonant tunnelling diodes: Experiment and theory, PHYSICAL REVIEW B,pp 125327-1,tot.pag 5,2007
  95. MARCONCINI PAOLO, MACUCCI MASSIMO, IANNACCONE GIUSEPPE,Equivalent resistance and noise of cascaded mesoscopic cavities, INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS,vol. 35,pp 295,tot.pag 304,tot. autori 3,2007
  96. Palestri, P.; Barin, N.; Brunel, D.; Busseret, C.; Campera, A.; Childs, P. A.; Driussi, F.; Fiegna, C.; Fiori, G.; Gusmeroli, R.; Iannaccone, G.; Karner, M.; Kosina, H.; Lacaita, A. L.; Langer, E.; Majkusiak, B.; Compagnoni, C. M.; Poncet, A.; Sangiorgi, E.; Selmi, L.; Spinelli, A. S.; Walczak, J.;,Comparison of Modeling Approaches for the Capacitance–Voltage and Current–Voltage Characteristics of Advanced Gate Stacks, IEEE TRANSACTIONS ON ELECTRON DEVICES,vol. 54,num. 1,pp 106-114,tot.pag 9,2007
  97. A. Campera, G. Iannaccone, F. Crupi,Modeling of Tunnelling Currents in Hf-Based Gate Stacks as a Function of Temperature and Extraction of Material Parameters, IEEE TRANSACTIONS ON ELECTRON DEVICES,vol. 54,num. 1,pp 83-89,tot.pag 7,2007
  98. Giusi Gino, IANNACCONE GIUSEPPE, Mohamed Mohamed, Ravaioli Umberto,Study of Warm-Electron Injection in Double-Gate SONOS by Full-Band Monte Carlo Simulation, I E E E ELECTRON DEVICE LETTERS,vol. 29,pp 415,tot.pag 4,2008
  99. IANNACCONE GIUSEPPE, DI PASCOLI STEFANO,Noise and reliability in simulated thin metal films, MICROELECTRONICS RELIABILITY,vol. 48,pp 1015,tot.pag 6,tot. autori 2,2008
  100. FIORI GIANLUCA, DI PASCOLI STEFANO, IANNACCONE GIUSEPPE,Three-dimensional simulations of quantum confinement and random dopants effects in nanoscale nMOSFETs, JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE,vol. 5,pp 1115,tot.pag 5,tot. autori 3,2008
  101. Marracini F., De vita G., DI PASCOLI STEFANO, IANNACCONE GIUSEPPE,Low-voltage nanopower clock generator for RFID applications, MICROELECTRONICS JOURNAL,vol. 39,pp 1736,tot.pag 4,tot. autori 4,2008
  102. Yoon Y., FIORI GIANLUCA, Hong S., IANNACCONE GIUSEPPE, Guo J.,Performance Comparison of Graphene Nanoribbon FETs With Schottky Contacts and Doped Reservoirs, I E E E TRANSACTIONS ON ELECTRON DEVICES,vol. 55/9,pp 2314,tot.pag 10,tot. autori 5,2008
  103. Michetti Paolo, Mugnaini G., IANNACCONE GIUSEPPE,Analytical Model of Nanowire FETs in a Partially Ballistic or Dissipative Transport Regime, I E E E TRANSACTIONS ON ELECTRON DEVICES,pp 56,tot.pag 9,tot. autori 3,2009
  104. Giusi Gino, IANNACCONE GIUSEPPE, Ravaioli U.,Time-dependent analysis of low VDD program operation in double-gate SONOS memories by full-band Monte Carlo simulation, JOURNAL OF APPLIED PHYSICS,pp 104506,tot.pag 8,tot. autori 3,2009
  105. FIORI GIANLUCA, IANNACCONE GIUSEPPE,Ultralow-Voltage Bilayer Graphene Tunnel FET, I E E E TRANSACTIONS ON ELECTRON DEVICES,vol. 56,pp 1096,tot.pag 3,tot. autori 2,2009
  106. Crupi F., Giusi Gino, IANNACCONE GIUSEPPE, Magnone P., Pace C., Simeon E., Claeys C.,Analytical model for the 1/f noise in the tunneling current through metal-oxide-semiconductor structures, JOURNAL OF APPLIED PHYSICS,vol. 106,pp 073710,tot.pag 3,tot. autori 7,2009
  107. Palestri P., Alexander C., Asenov A-, Aubry-fortuna V., Baccarini G., Bournel A., Braccioli M., Cheng B., Esposito A., Esseni D., Fenouillet-beranger C., Fiegna C., FIORI GIANLUCA, Ghetti A., IANNACCONE GIUSEPPE, Martinez A., Majkusiak B., Monfray S., Peikert V., Reggiani S., Riddet C., Saint-martin J., Sangiorgi E., Schenk A., Selmi L., Silvestri L., Toniutti P., Walczak J.,A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs, SOLID-STATE ELECTRONICS,vol. 53,pp 1293,tot.pag 10,tot. autori 29,2009
  108. Betti Alessandro, FIORI GIANLUCA, IANNACCONE GIUSEPPE,Enhanced shot noise in carbon nanotube field-effect transistors, APPLIED PHYSICS LETTERS,vol. 95,pp 252108,tot.pag 3,2009
  109. CHELI MARTINA, FIORI GIANLUCA, IANNACCONE GIUSEPPE,A Semianalytical Model of Bilayer-Graphene Field-Effect Transistor, I E E E TRANSACTIONS ON ELECTRON DEVICES,vol. 56,pp 2979,tot.pag 8,tot. autori 3,2009
  110. BETTI ALESSANDRO, FIORI GIANLUCA, IANNACCONE GIUSEPPE,Shot Noise Suppression in Quasi-One-Dimensional Field-Effect Transistors, I E E E TRANSACTIONS ON ELECTRON DEVICES,vol. 56,pp 2137,tot.pag 2143,2009
  111. FIORI GIANLUCA, IANNACCONE GIUSEPPE,On the Possibility of Tunable-Gap Bilayer Graphene FET, I E E E ELECTRON DEVICE LETTERS,vol. 30,pp 261,tot.pag 264,2009
  112. Marconcini Paolo, MACUCCI MASSIMO, IANNACCONE GIUSEPPE, PELLEGRINI BRUNO,Quantum analysis of shot noise suppression in a series of tunnel barriers, PHYSICAL REVIEW B (CONDENSED MATTER),pp 241307,tot.pag 4,tot. autori 4,2009
  113. Michetti Paolo, Recher P., IANNACCONE GIUSEPPE,Electric Field Control of Spin Rotation in Bilayer Graphene, NANO LETTERS: A JOURNAL DEDICATED TO NANOSCIENCE AND NANOTECHNOLOGY,vol. 10,pp 4463,tot.pag 7,tot. autori 3,2010
  114. FIORI GIANLUCA, Lebegue S., BETTI ALESSANDRO, Michetti Paolo, Klintenberg M., Eriksson D., IANNACCONE GIUSEPPE,Simulation of hydrogenated graphene field-effect transistors through a multiscale approach, PHYSICAL REVIEW B (CONDENSED MATTER AND MATERIALS PHYSICS),vol. 82,pp 153404,tot.pag 4,tot. autori 7,2010
  115. Deretzis I., FIORI GIANLUCA, IANNACCONE GIUSEPPE,Atomistic quantum transport modeling of metal-graphene nanoribbon heterojunctions, PHYSICAL REVIEW B (CONDENSED MATTER AND MATERIALS PHYSICS),vol. 82,pp 161413,tot.pag 4,tot. autori 3,2010
  116. Deretzis I., FIORI GIANLUCA, IANNACCONE GIUSEPPE, La magna A.,Effects due to backscattering and pseudogap features in graphene nanoribbons with single vacancies, PHYSICAL REVIEW B (CONDENSED MATTER AND MATERIALS PHYSICS),vol. 96,pp 085427,tot.pag 5,tot. autori 4,2010
  117. Michetti Paolo, Cheli Martina, IANNACCONE GIUSEPPE,Model of tunneling transistors based on graphene on SiC, APPLIED PHYSICS LETTERS,vol. 96,pp 133508,tot.pag 3,tot. autori 3,2010
  118. Chun B., IANNACCONE GIUSEPPE, Katz R., Lee G., NICCOLINI LUCA,An energy case for hybrid datacenters, OPERATING SYSTEMS REVIEW,vol. 44,pp 76,tot.pag 5,tot. autori 5,2010
  119. Betti Alessandro, FIORI GIANLUCA, IANNACCONE GIUSEPPE,Statistical Theory of shot noise in quasi-one-dimensional field-effect transistors in the presence of electron-electron interaction, PHYSICAL REVIEW B (CONDENSED MATTER AND MATERIALS PHYSICS),vol. 81,pp 035329,tot.pag 4,tot. autori 3,2010
  120. Michetti Paolo, IANNACCONE GIUSEPPE,Analytical Model of One-Dimensional Carbon-Based Schottky-Barrier Transistors, I E E E TRANSACTIONS ON ELECTRON DEVICES,vol. 57,pp 1616,tot.pag 10,tot. autori 2,2010
  121. CHELI MARTINA, Michetti Paolo, IANNACCONE GIUSEPPE,Model and Performance Evaluation of Field-Effect Transistors Based on Epitaxial Graphene on SiC, I E E E TRANSACTIONS ON ELECTRON DEVICES,vol. 57,pp 1936,tot.pag 6,tot. autori 3,2010
  122. Cheralathan M., Sampedro C., Roldán J.b., Gámiz F., IANNACCONE GIUSEPPE, Sangiorgi Enrico, Iñiguez B.,Compact drain-current model for reproducing advanced transport models in nanoscale double-gate MOSFETs, SEMICONDUCTOR SCIENCE AND TECHNOLOGY,vol. 26,pp 095015-1,tot.pag 7,tot. autori 7,2011
  123. BONFIGLIO VALENTINA, IANNACCONE GIUSEPPE,An Approach Based on Sensitivity Analysis for the Evaluation of Process Variability in Nanoscale MOSFETs, I E E E TRANSACTIONS ON ELECTRON DEVICES,vol. 58/8,pp 2266,tot.pag 8,tot. autori 2,2011
  124. Stanzione Stefano, Puntin Daniele, IANNACCONE GIUSEPPE,CMOS Silicon Physical Unclonable Functions Based on Intrinsic Process Variability, I E E E JOURNAL OF SOLID STATE CIRCUITS,vol. 46/6,pp 1456,tot.pag 8,tot. autori 3,2011
  125. Betti Alessandro, FIORI GIANLUCA, IANNACCONE GIUSEPPE,Strong mobility degradation in ideal graphene nanoribbons due to phonon scattering, APPLIED PHYSICS LETTERS,vol. 98/21,pp 212111,tot.pag 3,tot. autori 3,2011
  126. Giusi Gino, IANNACCONE GIUSEPPE, Crupi Felice, Ravaioli Umberto,A Backscattering Model Incorporating the Effective Carrier Temperature in Nano-MOSFET, I E E E ELECTRON DEVICE LETTERS,vol. 32/7,pp 853,tot.pag 3,tot. autori 4,2011
  127. Cheralathan M., IANNACCONE GIUSEPPE, Sangiorgi Enrico, Iniguez B.,Analytical drain current model reproducing advanced transport models in nanoscale cylindrical surrounding-gate (SRG) MOSFETs, JOURNAL OF APPLIED PHYSICS,vol. 110,pp 034510-1,tot.pag 5,2011
  128. Betti Alessandro, FIORI GIANLUCA, IANNACCONE GIUSEPPE,Atomistic Investigation of Low-Field Mobility in Graphene Nanoribbons, I E E E TRANSACTIONS ON ELECTRON DEVICES,vol. 58/9,pp 2824,tot.pag 7,tot. autori 3,2011
  129. Giusi Gino, IANNACCONE GIUSEPPE, Crupi Felice,A Microscopically Accurate Model of Partially Ballistic NanoMOSFETs in Saturation Based on Channel Backscattering, I E E E TRANSACTIONS ON ELECTRON DEVICES,vol. 58/3,pp 691,tot.pag 6,tot. autori 3,2011
  130. MAGNELLI LUCA, Crupi Felice, Corsonello Pasquale, Pace Calogero, IANNACCONE GIUSEPPE,A 2.6 nW, 0.45 V Temperature-Compensated Subthreshold CMOS Voltage Reference, I E E E JOURNAL OF SOLID STATE CIRCUITS,vol. 46,pp 465,tot.pag 10,tot. autori 5,2011
• 
  

  Capitolo, parte o articolo in libro

  1. M. Macucci, G. Iannaccone, M. Governale, C. Ungarelli, S. Francaviglia M. Girlanda, L. Bonci and M. Gattobigio,Critical assessment of the QCA architecture as a viable alternative tolarge scale integration in Mesoscopic Tunneling Devices,pp 171, 204, Research Signpost,tot.pag. 34,2004
  2. L. Bonci, S. Francaviglia, M. Gattobigio, C. Ungarelli, G. Iannaccone, M. Macucci,Time-independent Simulation of QCA Circuits in Quantum Cellular Automata: Theory, Experimentation, Prospects,pp 65, 84, Imperial College Press,tot.pag. 20,2006
  3. F. E. Prins, C. Single, G. Wetekam, D. P. Kern, M. Macucci, L. Bonci, G. Iannaccone, M. Gattobigio,Implementation of QCA Cells with SOI Technology in Quantum Cellular Automata: Theory, Experimentation, Prospects,pp 143, 178, Imperial College Press,tot.pag. 36,2006
  4. L. Bonci, M. Gattobigio, G. Iannaccone, M. Macucci,Time-dependent Analysis of QCA Circuits with the Monte Carlo method in Quantum Cellular Automata: Theory, Experimentation, Prospects,pp 109, 142, Imperial College Press,tot.pag. 34,2006
  5. G. Iannaccone, C. Ungarelli, M. Governale, M. Macucci, S. Gardelis, C. G. Smith, J. Cooper, D. A. Ritchie, E. H. Linfield,Non-Invasive Charge Detectors in Quantum Cellular Automata: Theory, Experimentation, Prospects,pp 213, 228, Imperial College Press,tot.pag. 16,2006
  6. Y. Jin, C. G. Smith, J. Martorell, D. W. L. Sprung, P. A. Machado, M. Girlanda, M. Governale, G. Iannaccone, M. Macucci,Implementation of QCA Cells in GaAs Technology in Quantum Cellular Automata: Theory, Experimentation, Prospects,pp 179, 212, Imperial College Press,tot.pag. 34,2006
  7. IANNACCONE GIUSEPPE, FIORI GIANLUCA, Pala Marco, Reggiani Susanna,Beyond CMOS in Beyond CMOS,pp 443, 474,tot. autori 4,tot.pag. 32,2010
• 
  

  Atti di convegni nazionale con revisori articolo in extenso

  1. Razafindramora Juliano, Perniola Luca, Jahan Carine, Marc Gely, Vizioz C, Carabasse C, Boulanger Fabien, De salvo Barbara, Deleonibus Simon, Lombardo Salvo, Bongiorno C, IANNACCONE GIUSEPPE,Low voltage hot-carrier programming of ultra-scaled SOI Finflash memories, ESSDERC, pp 414-417, Munich, Germany, tot. autori 13,2007
• 
  

  Articolo in atti di congresso

  1. G. Iannaccone,Weak measurement and the traversal time problem, Adriatico Research Conference, pp 292, Trieste,vol. 1,1997
  2. G. Iannaccone, M. Macucci, B. Pellegrini,Temperature dependence of shot noise in resonant tunneling structures, 14th International Conference on Noise in Physical Systems and 1/f fluctuations, pp 655, Leuven,vol. -,1997
  3. G. Iannaccone, M. Macucci, B. Pellegrini,Theory of conductance and noise additivity in parallel mesoscopic conductors, 14th International Conference on Noise in Physical Systems and 1/f fluctuations, pp 281, Leuven,vol. -,1997
  4. G. Lombardi, M. Macucci, G. Iannaccone, B. Pellegrini,Shot-noise dependence on barrier symmetry in resonant tunneling diodes, 14th International Conference on Noise in Physical Systems and 1/f fluctuations, pp 663, Leuven,vol. -,1997
  5. G. Iannaccone, A. Trellakis, U. Ravaioli,Modeling of a silicon quantum-dot flash memory, 3rd Workshop on Innovative Circuits and Systems for Nanoelectronics, pp D3/1, Munich,vol. -,1998
  6. G. Iannaccone, C. Ungarelli, M. Macucci,Simulation and design of a single charge detector, 6th International Workshop on Computational Electronics, pp 145, Osaka,vol. -,1998
  7. G. Iannaccone, C. Ungarelli, M. Macucci,Modeling of a single charge detector based on a quantum point contact, 3rd Workshop on Innovative Circuits and Systems for Nanoelectronics, pp D2/1, Munich,vol. 1998,1998
  8. M. Girlanda, M. Governale, M. Macucci, G. Iannaccone,Configuration-interaction based simulation of a quantum cellular automaton cell, 6th International Workshop on Computational Electronics, pp 141, Osaka,vol. -,1998
  9. A. Bardi, M. Dell'Orso, S. Galeotti, P. Giannetti, G. Iannaccone, E. Meschi, F. Spinella,The tree search processor for real-time track finding, 1998 IEEE Nuclear Science Symposium and Medical Imaging Conference, pp 969, Toronto,vol. 2,1998
  10. M. Macucci, G. Iannaccone, B. Pellegrini,Quantum-Mechanical Simulation of Shot Noise in the Elastic Diffusive Regime, International Conference on Noise and 1/f Fluctuations in Physical Systems, pp 399, Hong Kong,vol. -,1999
  11. S. Di Pascoli, G. Iannaccone,Simulation of electromigration noise in polycrystalline metal stripes, 15th International Conference on Noise and 1/f Fluctuations in Physical Systems, pp 325, Hong Kong,vol. -,1999
  12. F. Crupi, G. Iannaccone, B. Neri, I. Crupi, R. Degraeve, G. Groeseneken, H. E. Maes,Origin of the Substrate Current after Soft-Breakdown in Thin Oxide n-MOSFETs, 7th International Symposium on the Physical and Failure Analysis of Integrated Circuits, pp 77, Singapore,vol. -,1999
  13. S. Di Pascoli, G. Iannaccone,Monte-Carlo Simulation of Electromigration in Polycrystalline Metal Stripes, 7th International Symposium on the Physical and Failure Analysis of Integrated Circuits, pp 55, Singapore,vol. 1,1999
  14. G. Iannaccone, M. Macucci, B. Pellegrini,Signatures of electron-electron interaction in nanoelectronic device shot noise, 2nd International Conference on Unsolved Problems on Noise and fluctuations, pp 171, Adelaide, Australia,vol. 1,1999
  15. M. Macucci, G. Iannaccone, S. Francaviglia, G. Lucchetti, M. Governale, M. Girlanda,Challenges in the simulation of logic gates and circuits based on the Quantum Cellular Automaton (QCA) concept, European Conference on Circuit Theory and Design ECCTD ’99, pp 831, Stresa,vol. 2,1999
  16. G. Iannaccone, S. Gennai,Program, erase and retention times ofthin-oxide Flash-EEPROMs, 7th International Workshop on Computational Electronics, pp 153, Glasgow,vol. -,2000
  17. M. Macucci, G. Iannaccone, S. Francaviglia, M. Governale, M. Girlanda, C. Ungarelli,Problems and perspectives in quantum-dot based computation, Frontiers of Nano-Optoelectronic Systems, pp 455, Stresa,vol. 1,2000
  18. E. Amirante, G. Iannaccone,Three-dimensional statistical modeling of the effects of the random distribution of dopants in deep sub-micron nMOSFETs, 7th International Workshop on Computational Electronics, pp 151, Glasgow,vol. -,2000
  19. M. Macucci, G. Iannaccone, B. Pellegrini,Shot noise suppression in single and multiple ballistic and diffusive cavities, 16th International Conference on Noise in Physical Systems and 1/f Fluctuations, pp 455, Gainesville, Florida, USA,vol. -,2001
  20. M. Gattobigio, G. Iannaccone, M. Macucci,Shot noise enhancement and suppression in systems of coupled quantum dots, 16th International Conference on Noise in Physical Systems and 1/f fluctuations, pp 447, Gainesville, Florida,vol. -,2001
  21. E. Amirante, A. Bargagli-Stoffi, J. Fischer, G. Iannaccone, D. Schmitt-Landsiedel,Variations of the Power Dissipation in Adiabatic Logic Gates, 11th International Workshop Power and Timing Modeling, Optimization and Simulation, pp D1.1, Yverdon-Les-Bains, Switzerland,vol. -,2001
  22. G. Iannaccone, P. Coli,Detailed modeling of nanocrystal flash memories, Workshop on the Ultimate Integration of Silicon, pp 101, Grenoble,vol. -,2001
  23. PUNTIN DANIELE, STANZIONE STEFANO, IANNACCONE GIUSEPPE,CMOS unclonable system for secure authentication based on device variability, ESSCIRC, pp 130-133, Edimburgo, tot. autori 3,2008
  24. STANZIONE STEFANO, IANNACCONE GIUSEPPE,Silicon physical unclonable function resistant to a 1025-trial brute force attack in 90 nm CMOS, VLSI Symposium, pp 116-117, Kyoto, tot. autori 2,2009
• 
  

  Atto di convegno internazionale con revisori articolo su invito

  1. M. Macucci, G. Iannaccone, S. Francaviglia, M. Governale, M. Girlanda, C. Ungarelli,Problems and perspectives in quantum-dot based computation, NATO Advanced Research Workshop on "Frontiers of Nano-Optoelectronic Systems", pp 455, Kiev, Ucraina,vol. 1,2000
  2. G. Iannaccone,Mesoscopic Noise in VLSI Devices, Noise and Information in Nanoelectronics, Sensors, and Standards, pp 31-39, Santa Fe, New Mexico, US,vol. 5115,2003
  3. M. Macucci, P. Marconcini, G. Iannaccone, B. Pellegrini,Shot noise in low-dimensional systems, International Confenence on Noise and Fluctuations (ICNF), pp 277-282, Praga, Repubblica Ceca,vol. -,2003
  4. BASSO GIOVANNI, MACUCCI MASSIMO, IANNACCONE GIUSEPPE, PELLEGRINI BRUNO, Gattobigio M., Marconcini P.,Shot noise in mesoscopic devices and quantum dot networks, NANOT Advanced Res. Workshop on Advanced Experimental Methods for Noise Research in Nanoscale Ele, pp 45-52, Brno, Rep. Ceca,vol. 151, tot. autori 6,2004
  5. M. G. Pala, G. Iannaccone, M. Macucci, G. Marola,Modeling the effects of dephasing on mesoscopic noise, Noise and Information in Nanoelectronics, Sensors and Standard, II, pp 51-59, Gran Canaria, Spain,vol. 5472,2004
  6. G. Iannaccone,Perspectives and Challenges in nanoscale device modeling, European Micro and Nano Systems 2004, pp 1-5, Noisy le Grand (Paris),vol. -,2004
  7. G. Iannaccone,Modeling of suppressed shot noise in stress-induced leakage currents, 18th International Conference on Noise and Fluctuations, pp 203-208, Salamanca,vol. 780,2005
  8. Crupi Felice, Magnone Paolo, IANNACCONE GIUSEPPE, Giusi Gino, Pace Calogero, Simoen Eddy, Claeys Cor,Modeling the gate current 1/f noise and its application to advanced CMOS devices, 9th International Conference on Solid-State and Integrated-Circuit Technology, pp 420-423, Bejing,2008
  9. IANNACCONE GIUSEPPE, FIORI GIANLUCA, MACUCCI MASSIMO, Michetti Paolo, CHELI MARTINA, BETTI ALESSANDRO, Marconcini Paolo,Perspectives of graphene nanoelectronics: probing technological options with modeling, Electron Devices Meeting (IEDM), 2009 IEEE International, pp 245-248, Baltimora (USA), tot. autori 7,2009
  10. IANNACCONE GIUSEPPE, BETTI ALESSANDRO, FIORI GIANLUCA,Transport and noise properties of graphene-based transistors revealed through atomistic modelling, 15th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2010, pp 5604587.3-5604587.6, Bologna, tot. autori 3,2010
  11. IANNACCONE GIUSEPPE, FIORI GIANLUCA, CHELI MARTINA, Michetti Paolo, MACUCCI MASSIMO, BETTI ALESSANDRO, Marconcini Paolo,Graphene as a material for nanoelectronics, ECS Meeting,2010
  12. IANNACCONE GIUSEPPE, Betti Alessandro, FIORI GIANLUCA,Noise in graphene and carbon nanotube devices, 21st International Conference on Noise and Fluctuations, pp 360-363, Toronto, tot. autori 3,2011
  13. MACUCCI MASSIMO, Marconcini Paolo, IANNACCONE GIUSEPPE,Localization and shot noise in quantum nanostructures, 21st International Conference on Noise and Fluctuations, pp 139-143, Toronto, tot. autori 3,2011
• 
  

  Atto di convegno internazionale con revisori articolo in extenso

  1. G. Fiori, G. Iannaccone,Effects of quantum confinement and discrete dopants in nanoscale bulk Si MOSFETs, First IEEE Conference on Nanotechnology, pp 248-253, Maui, Hawaii, USA,vol. -,2001
  2. P. Coli, G. Iannaccone,evaluation of performance and perspectives of nanocrystal Flash memories based on 3D quantum modeling, First IEEE Conference on Nanotechnology, pp 140-145, Maui, Hawaii, USA,vol. -,2001
  3. G. Iannaccone, M. Macucci, P. Coli, G. Curatola, G. Fiori, M. Gattobigio, M. Pala,Towards Nanotechnology Computer Aided Design: the NANOTCAD Project, First IEEE Conference on Nanotechnology, pp 211-216, Maui, Hawaii, USA,vol. -,2001
  4. E. Amirante, A. Bargagli-Stoffi, J. Fischer, G. Iannaccone, D. Schmitt-Landsiedel,Adiabatic 4-bit Adders: Comparison of Performance, 45th Midwest Symposium on Circuits and Systems, pp 644-647, Tulsa, Oklahoma,,vol. 3,2002
  5. G. Iannaccone, E. Amirante,Quantum and semiclassical modeling of threshold voltage dispersion due to random dopants in deep sub-micron MOSFETs, IEEE Nanotechnology 2002, pp 197-200, Washington DC,vol. -,2002
  6. G. Iannaccone, G. Fiori, G. Curatola,Techniques and Methods for the Simulation of nanoscale ballistic MOSFETs, IEEE Nanotechnology 2002, pp 193-196, Washington DC,vol. -,2002
  7. G. Iannaccone,Evaluation of program, erase and retention times of Flash memories with very thin gate dielectric, IEEE Nanotechnology 2002, pp 247-250, Washington DC,vol. -,2002
  8. G. Fiori, G. Iannaccone,Ballistic modeling of 25 nm "Well tempered" MOSFETs, ULIS 2002, pp 115-117, Munich, Germany,vol. .,2002
  9. E. Amirante, A. Bargagli-Stoffi, J. Fischer, G. Iannaccone, D. Schmitt-Landsiedel,Adiabatic 4-bit Adders: Comparison of Performance and Robustness against Technology Parameter Variations, Proceedings of the 45th IEEE International Midwest Symposium on Circuits and Systems, pp 38, Tulsa, Oklahoma,vol. -,2002
  10. G. Iannaccone,Shot noise in nanoscale ballistic MOSFETs, International Conference on Noise and Fluctuations, pp 614-617, Praga, Repubblica Ceca,vol. -,2003
  11. Curatola, G. Fiori, G., Iannaccone, G.,Challenges and solutions for numerical modeling of nanoMOSFETs, 2003 Third IEEE Conference on Nanotechnology, pp 535-538, San Francisco, USA,vol. 2,2003
  12. G. Iannaccone, M. Macucci, G. Basso, B. Pellegrini,Concurrent effects of Pauli and Coulomb interaction in resonant tunneling diodes at low bias and low temperature, International Conference on Noise and Fluctuations, pp 283-286, Praga, Repubblica Ceca,vol. 2003,2003
  13. G.Curatola, G. Fiori and G.Iannaccone,Modeling End-of-The-Roadmap CMOS devices, 4th European Workshop on ULtimate Integration of Silicon, pp 113-116, Udine, Italia,vol. 1,2003
  14. J. Fischer, E. Amirante, F. Randazzo, G. Iannaccone, D. Schmitt-Landsiedel,Reduction of the energy consumption in adiabatic gates by optimal transistor sizing, PATMOS Power and Timing Modeling, Optimization and Simulation, pp 309-318, Turin,vol. -,2003
  15. G. Molas, B. De Salvo, G. Ghibaudo, G. Iannaccone, D. Mariolle, A. Toffoli, N. Buffet, S. Lombardo, S. Deleonibus.,On the occurence of few electron phenomena in ultra-scaled Silicon nano-crystal memories, ESSDERC 2003, pp 99-102, estoril, portugal,vol. 2003,2003
  16. G. Fiori, G.Iannaccone, G. Molas, B. De Salvo,Dependence of the programming window of SOI nanocrystal memories on the channel width, IEEE Silinon Nanoelectronics Workshop, pp 97-99, Honolulu, Hawaii,vol. -,2004
  17. L. Perniola, G.Iannaccone, B.De Salvo, G. Ghibaudo, and C. Gerardi,Analytical model for the extraction of the trapped charge distribution in memories based on discrete storage nodes programmed via CHE injection, IEEE Silicon Nanoelectronics Workshop, pp 111-113, Honolulu, Hawaii,vol. -,2004
  18. G. Curatola, G. Iannaccone,Comparison of strained silicon and bulk MOSFETs in the ballistic regime, 5th European Workshop on Ultimate Integration of Silicon, pp 19-22, Leuven,vol. -,2004
  19. G. Iannaccone, G. Curatola, G. Fiori,Effective Bohm Quantum Potential for device simulators based on drift-diffusion and energy transport, Simulation of Semiconductor Processes and Devices 2004, pp 275-278, Munich,vol. 2004,2004
  20. L. Perniola,S. Bernardini, G. Iannaccone,B. De-Salvo, G. Ghibaudo, P. Masson, C. Gerardi,,Electrostatic effect of localised charge in dual bit memory cells with discrete traps, Solid-State Device Research conference, 2004. ESSDERC 2004, pp 249-252, Leuven,vol. 34,2004
  21. A. Schliemann, L. Worschech, A. Forchel, G. Curatola, G. Iannaccone,Universal signature of ballistic transport in nanoscale field effect transistors, International Electron Device Meeting 2004, pp 1039-1042, San Francisco,vol. -,2004
  22. G. De Vita, G. Iannaccone,Design Criteria for the RF section of Long Range passive RFID Systems, Norchip, pp 107-110, Oslo, Norway,vol. -,2004
  23. Scappucci, G.; Di Gaspare, L.; Notargiacomo, A.; Evangelisti, F.; Giovine, E.; Leoni, R.; Piazza, V.; Pingue, P.; Beltram, F.; Pala, M.G.; Curatola, G.; Iannaccone, G.;,Ballistic transport in strained-Si cavities: experiment and theory, Nanotechnology, 2004. 4th IEEE Conference on, pp 92-94, Nagoya,vol. -,2004
  24. G. Mugnaini, G. Iannaccone,Proposal of a physics-based compact model for nanoscale MOSFETs including the transition from drift-diffusion to ballistic transport, Simulation of Semiconductor Processes and Devices 2004, pp 363-366, Munich,vol. -,2004
  25. FIORI GIANLUCA, IANNACCONE GIUSEPPE, Pala Marco,Three-dimensional simulation of Single Electron Transistors, IEEE-NANO, pp 337-339, Monaco,2004
  26. G. Fiori, G. Iannaccone, G. Klimeck,Performance of carbon nanotube field effect transistors with doped source and drain extensions and arbitrary geometry, International Electron Device Meeting, pp 522-525,vol. -,2005
  27. G. Fiori, G. Iannaccone, M. Lundstrom, G. Klimeck,Three-dimensional atomistic simulation of Carbon nanotube FETs with realistic geometry, 35th European Solid-State Device Research Conference, pp 537-540, Grenoble,vol. -,2005
  28. M. Macucci, G. Iannaccone, P. Marconcini,Shot noise behavior of cascaded mesoscopic structures, 27th International Conference on the Physics of Semiconductors, pp 473-474, Flagstaff, Arizona, USA,vol. 1,2005
  29. G. Fiori, G. Iannaccone,Simulation of one-dimensional subband transport in ultra-short silicon nanowire transistors, 6th International Conference on the Ultimate Integration of Silicon, pp 163-166, Bologna,vol. -,2005
  30. A. Campera, G. Iannaccone, F. Crupi, G. Groeseneken,Extraction of physical parameters of alternative high-k gate stacks through comparison between measurements and quantum simulations, 6th International Conference on the Ultimate Integration of Silicon, pp 35-38, Bologna,vol. -,2005
  31. G. Mugnaini, G. Iannaccone,Analytical Treatment of far-from-equilibrium transport in low-dimensional MOSFETs, 6th International Conference of Ultimate Integration of Silicon, pp 53-56, Bologna,vol. -,2005
  32. G. De Vita, G. Iannaccone,Ultra-low-power, temperature-compensated refererence voltage generator, Custom Integrated Circuit Conference, pp 751-754, San Jose, California,vol. -,2005
  33. G. Mugnaini, G. Iannaccone,Analytical Model for Nanowire and Nanotube Transistors covering both dissipative and ballistic transport, 35th European Solid-State Device Research Conference, pp 213-216, Grenoble, France,vol. -,2005
  34. A. Campera, G. Iannaccone,Time-dependent simulation of the program and erase operations of nanocrystal Flash memories, First International Conference on Memory Technology and Design, pp 33-36, Giens, France,vol. -,2005
  35. L. Perniola, G. Iannaccone, B. De Salvo, G. Ghibaudo, G.Molas, C. Gerardi, S. Deleonibus,Experimental and theoretical analysis of scaling issues in dual-bit discrete trap non-volatile memories, International Electron Device Meeting 2005, pp 877-880, Washington DC,vol. -,2005
  36. G. De Vita, G. Iannaccone,Ultra low power RF section of a passive microwave RFID transponder in 0.35 micron BiCMOS, IEEE International Symposium on Circuits and Systems, 2005 - ISCAS 2005, pp 5075-5078, Kyoto,vol. 5,2005
  37. I. A. Maione, G. Basso, M. Macucci, G. Iannaccone, B. Pellegrini,Transition between Pauli Exclusion and Coulomb Interaction in the Noise Behavior of Resonant Tunneling Diodes, 18th International Conference on Noise and Fluctuations, pp 435-438, Salamanca,vol. 780,2005
  38. G. De Vita, G. Iannaccone,Ultra-low-power series voltage regulator for passive microwave RFID transponders, NORCHIP Conference, 2005. 23rd, pp 58-61, Oulu, Finland,vol. -,2005
  39. L. Perniola, G. Iannaccone, B. De Salvo, G. Ghibaudo, G. Molas, C. Gerardi, S. Deleonibus,Experimental and theoretical analysis of scaling issues in dual-bit discrete trap non-volatile memories, International Electron Device Meeting, pp 857-860, Washington DC,vol. -,2005
  40. G. De Vita. G. Iannaccone, P. Andreani,A 300 nW, 12 ppm deg/C Voltage Reference in a Digital 0.35 micron CMOS Process, Symposium on VLSI Circuits, pp 81-82, Honolulu, Hawaii,vol. -,2006
  41. G. De Vita, G. Iannaccone,Ultra-low-power flash memory in standard 0.35 micron CMOS for passive microwave RFID transponders, International Symposium on Circuits and Systems - ISCAS 2006, pp 3918-3921, Greece,vol. -,2006
  42. G. De Vita, G. Iannaccone,A Sub-1 V, 10 ppm/°C, Nanopower Voltage Reference Generator, European Solid State Circuit Conference - ESSCIRC 2006, pp 307-310, Montreaux, Switzerland,vol. -,2006
  43. FIORI GIANLUCA, IANNACCONE GIUSEPPE,Threshold voltage dispersion and impurity scattering limited mobility in carbon nanotube field effect transistors with randomly doped reservoirs, Solid-State Device Research Conference, 2006. ESSDERC 2006., pp 202-205, Montreaux,2006
  44. Bonci Luca, MACUCCI MASSIMO, IANNACCONE GIUSEPPE, Pala Marco g.,Numerical Study of Weak Localization effects in disordered cavities, International Conference on Nonequilibrium Carrier Dynamics in Semiconductors, pp 55-59, Chicago,2006
  45. S. Poli, G. Fiori, S. Reggiani, A. Gnudi, G. Iannaccone,Tight-binding versus effective-mass modeling of carbon nanotube FETs, International Conference on Ulitmate Integration on Silicon, pp 43-46, Leuven, Belgium,vol. -,2007
  46. G. De Vita, G. Iannaccone,A Voltage Regulator for Subthreshold Logic, International Solid-State Circuit Conference, pp 530-531, San Francisco, USA,vol. -,2007
  47. Nardi Francesca, IANNACCONE GIUSEPPE,Physical Insight on design of SONOS FinFETs programmed with channel tunneling, International Conference on Memory Technology and Design, pp 77-80, Giens, France,2007
  48. Marraccini Francesco, De vita Giuseppe, IANNACCONE GIUSEPPE,Low-Voltage Low-Power CMOS Oscillator with Low Temperature and Process Sensitivity, International Symposium on Circuits And Systems - ISCAS 2007, pp 2152-2155, New Orleans,2007
  49. FIORI GIANLUCA, Yoon Youngki, Hong Seokmin, IANNACCONE GIUSEPPE, Guo Jing,Performance comparison of graphene nanoribbon schottky barrier and MOS FETs, International Electron Device Meeting, pp 757-760, Washington,2007
  50. Perniola L, Nowak E., IANNACCONE GIUSEPPE, Scheiblin P., Jahan C., Pananakakis G., Razafindramora J., Deleonibus S., Reimbold G., Boulanger F., De salvo B.,Physical Model for NAND operation in SOI and Body-Tied Nanocrystal FinFLASH memories, Tech. Digest IEDM 2007, pp 943-946, Washington,2007
  51. IANNACCONE GIUSEPPE, Lombardo S., Gerardi C., Breuil L., Jahan C., Perniola L., Cina G., Corso D., Tripiciano E., Ancarani V., Iacono G., Bongiorno C., Garozzo C., Barbera P., Nowak E., Puglisi R., Costa G.a., Coccorese C., Vecchio M., Rimini E., Van houdt J., De salvo B., Melanotte M.,Advantages of the FinFET Architecture in SONOS and Nanocrystal Memory Devices, Tech. Digest IEDM 2007, pp 921-924, Washington,2007
  52. Betti Alessandro, FIORI GIANLUCA, IANNACCONE GIUSEPPE,Shot noise in quasi one-dimensional FETs, International Electron Device Meeting, pp 185-188, San Francisco, CA - USA, tot. autori 3,2008
  53. Magnone P., Crupi F., IANNACCONE GIUSEPPE, Giusi G., Pace C., Simeon E., Claeys C.,A model for MOS gate stack quality evaluation based on the gate current 1/f noise, 9th Conference on ULtimate Integration on Silicon, pp 141-144, Udine,2008
  54. BETTI ALESSANDRO, FIORI GIANLUCA, IANNACCONE GIUSEPPE,Shot noise analysis in quasi one-dimensional field effect transistors, International Conference on Noise and Fluctuations, pp 581-584, Pisa,2009
  55. CHELI MARTINA, Michetti Paolo, IANNACCONE GIUSEPPE,Physical Insights on Nanoscale FETs Based on Epitaxial Graphene on SiC, 39th ESSDERC Conference, pp 193-196, Athen, Greece,2009
  56. BONFIGLIO VALENTINA, IANNACCONE GIUSEPPE,Analytical and TCAD-supported Approach to Evaluate Intrinsic Process Variability in Nanoscale MOSFETs, ESSDERC, pp 419-422, Atene,2009
  57. Gayer Mark, IANNACCONE GIUSEPPE,A software platform for nanoscale device simulation and visualization, Advances in Computational Tools for Engineering Applications, 2009. ACTEA '09., pp 432-437, Beirut, Lebanon, tot. autori 2,2009
  58. Palestri P., Alexander C., Asenov A., Baccarani G., Bournel A., Braccioli M., Cheng B., Dollfus P., Esposito A., Esseni D., Ghetti A., Fiegna C., FIORI GIANLUCA, Aubry-fortuna V., IANNACCONE GIUSEPPE, Martinez A., Majkusiak B., Monfray S., Reggiani S., Riddet C., Saint-martin J., Sangiorgi E., Schenk A., Selmi L., Silvestri L., Walczak J.,Comparison of advanced transport models for nanoscale nMOSFETs, ULIS 2009, pp 125-128, Aachen-Germany,2009
  59. FIORI GIANLUCA, IANNACCONE GIUSEPPE,Performance analysis of graphene bilayer transistors through tight-binding simulations, 13th International Workshop on Computational Electronics, pp 301-304, Beijing,2009
  60. MARCONCINI PAOLO, FIORI GIANLUCA, FERRETTI ALESSANDRO, IANNACCONE GIUSEPPE, MACUCCI MASSIMO,Numerical Analysis of transport properties of boron-doped graphene FETs, 13th International Workshop on Computational Electronics, pp 85-88, Beijing,2009
  61. Marconcini Paolo, MACUCCI MASSIMO, IANNACCONE GIUSEPPE, PELLEGRINI BRUNO,Effect of localization on the Fano factor of cascaded tunnel barriers, ICNF 2009, pp 423-426,2009
  62. BETTI ALESSANDRO, FIORI GIANLUCA, IANNACCONE GIUSEPPE,Physical insights on graphene nanoribbon mobility through atomistic simulations, Electron Devices Meeting (IEDM), 2009 IEEE International, pp 897-900, Baltimora (USA), tot. autori 3,2009
  63. Sangiorgi E., Alexander C., Asenov A., Aubry-fortuna V., Baccarani G., Bournel A., Braccioli M., Cheng B., Dollfus P., Esposito A., Esseni D:, Fenouillet-beranger C., FIORI GIANLUCA, Ghetti A., IANNACCONE GIUSEPPE, Martinez A., Majkusiak B., Monfray S., Palestri P:, Peikert V., Reggiani S., Riddet C., Saint-martin J., Schenk A., Selmi L., Silvestri L:, Toniutti P., Walczak L:,Drain current computation in nanoscale nMOSFETs: Comparison of transport models, 27th International Conference on Microelectronics, pp 3-7, University of Nis, Serbia, tot. autori 29,2010
  64. Yang Xuebei, FIORI GIANLUCA, IANNACCONE GIUSEPPE, Mohanram Kartik,Semi-analytical model for Schottky-barrier carbon nanotube and graphene nanoribbon transistors, GLSVLSI 2010, pp 233-238, Providence, Rhode Island, USA, tot. autori 4,2010
  65. Deretzis Ioannis, FIORI GIANLUCA, IANNACCONE GIUSEPPE, La magna Antonino,Quantum transport modeling of Schottky junctions between metallic contacts and pure/defected graphene nanoribbons, E-MRS 2010 Symposium, Strasbourg,2010
  66. FIORI GIANLUCA, Legebue S., BETTI ALESSANDRO, Michetti Paolo, Klintenberg M., Eriksson D., IANNACCONE GIUSEPPE,A multi-scale approach for performance assessment of hydrogenated graphene Field-Effect Transistors, 14th International Workshop on Computational Electronics, IWCE 2010, pp 299-302, Pisa, tot. autori 7,2010
  67. BETTI ALESSANDRO, FIORI GIANLUCA, IANNACCONE GIUSEPPE,Enhanced shot noise in carbon nanotube FETs due to electron-hole interaction, 14th International Workshop on Computational Electronics, IWCE 2010, pp 303-306, Pisa, tot. autori 3,2010
  68. Giusi G., IANNACCONE GIUSEPPE, Maji D., Crupi Felice,Experimental extraction of barrier lowering and backscattering in saturated short-channel MOSFETs, 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, pp 1761-1764,2010
  69. Leem L., Srivastava A., Shuang L., Magyari-kope B., IANNACCONE GIUSEPPE, Harris J.s., FIORI GIANLUCA,Multi-scale simulation of partially unzipped CNT hetero-junction Tunneling Field-Effect Transistor, 2010 IEEE International Electron Devices Meeting, IEDM 2010, pp 32.5.1-32.5..4, San Francisco, tot. autori 7,2010
  70. BETTI ALESSANDRO, FIORI GIANLUCA, IANNACCONE GIUSEPPE,Full band assessment of phonon-limited mobility in Graphene NanoRibbons, 2010 IEEE International Electron Devices Meeting, IEDM 2010, pp 32.2.1-32.2.4, San Francisco, tot. autori 3,2010
  71. BONFIGLIO VALENTINA, IANNACCONE GIUSEPPE,Evaluation of threshold voltage dispersion in 45 nm CMOS technology with TCAD-based sensitivity analysis, 14th International Workshop on Computational Electronics, IWCE 2010, pp 101-104, Pisa, tot. autori 2,2010
  72. Cheralathan M., Sampedro C., Roldán J.b., Gámiz F., IANNACCONE GIUSEPPE, Sangiorgi Enrico, Iniguez B.,Analytical drain current model reproducing advanced transport models in nanoscale double-gate (DG) MOSFETs, 12th International Conference on Ultimate Integration on Silicon, pp 27-30, tot. autori 7,2011
• 
  

  Atto di convegno internazionale con revisori articolo breve / poster

  1. FIORI GIANLUCA, IANNACCONE GIUSEPPE,Effects of quantum confinement and discrete dopants in nanoscale bulk-Si nMOSFETs, 8-th MEL-ARI/NID Workshop, pp ---, Wuerzburg,2001
  2. G. Curatola, G. Iannaccone,Nanotcad two-dimensional simulator, 10th MEL-ARI/NID Workshop, pp 30-30, Helsinki,vol. -,2002
  3. M. Pala, G. Iannaccone,Schroedinger equation solver with open boundary conditions, 10th MEL-ARI/NID Workshop, pp 31-32, Helsinki,vol. -,2002
  4. M. G. Pala, M. Governale, J. Koenig, U. Zuelicke, G. Iannaccone,Universal Rashba spin precession of holes and electrons, Spintech II, pp 13-13, Brugge, Belgium,vol. -,2003
  5. P. Marconcini, M. Macucci, G. Iannaccone, B. Pellegrini,Theoretical Analysis of shot noise suppression in chaotic cavity in the presence of a magnetic field, 11th MELARI/NID Workshop, pp 77-77, Toulouse, Francia,vol. 1,2003
  6. G. Iannaccone,Towards the quantum simulation of nanoscale MOSFETs, 11th MELARI/NID Workshop, pp 76-76, Toulouse, Francia,vol. 1,2003
  7. G. Fiori, G. Iannaccone,"Atomistic", quantum and ballisticeffects in sub-100nm "well tempered" MOSFET, International Workshop on Computational Electronics, pp 1-11-1-12, Roma,vol. -,2003
  8. M. G. Pala, G. Iannaccone,Modeling decoherence effects on transport properties of mesoscopic devices, International Workshop on Computational Electronics, pp p45-p46, Roma,vol. -,2003
  9. G. Curatola, G. Iannaccone,Ballistic transport in SiGe and strained Si Mosfets, International Workshop on Computational Electronics, pp p15-p16, Roma,vol. -,2003
  10. G. Iannaccone,Analytical and numerical investigation of noise in nanoscale ballistic field effect transistors, International Workshop on Computational Electronics, pp 42-43, West Lafayette, Indiana, USA,vol. -,2004
  11. G. Fiori, G. Iannaccone,Code for the 3D simulation of nanoscale semiconductor devices, including drift-diffusion and ballistic transport in 1D and 2D subbands, and 3D tunneling, International Workshop on Computational Electronics, pp 223-224, West Lafayette,vol. -,2004
  12. Betti Alessandro, FIORI GIANLUCA, IANNACCONE GIUSEPPE,Effects of electron‐electron interaction on shot noise in quasi‐one dimensional conductors, 1st FoNE Conference  NANOELECTRONICS 2008, pp 48-48,2008
• 
  

  Articolo su atti di congresso internazionale

  1. De vita Giuseppe, IANNACCONE GIUSEPPE,A 109 nW, 44 ppm°C CMOS Current Reference with Low Sensitivity to Process Variations, International Symposium on Circuits And Systems - ISCAS 2007, pp 3804-3807, New Orleans,2007
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  Riassunto di comunicazione a congresso internazionale

  1. IANNACCONE GIUSEPPE,Variability in novel device architectures, Workshop on CMOS Variablity Research in Europe, pp 12-12, Edinburgh, UK,2008
  2. CHELI MARTINA, FIORI GIANLUCA, IANNACCONE GIUSEPPE,An analytical investigation of bilayer graphene as material for electronics , 1st FoNE Conference  NANOELECTRONICS 2008, pp 51-52,2008
  3. IANNACCONE GIUSEPPE, Fiori Gianluca, Macucci Massimo,Physical insights into the performance of MOSFETs based on silicon nanowires, carbon nanotubes, or graphene nanostripes , 1st FoNE Conference  NANOELECTRONICS 2008, pp 36-36, Taormina,2008
• 
  

  Curatele di libri collettanei o di Atti di convegno

  1. L. B. Kish, F. Green, G. Iannaccone, J. R. Vig,Noise and Information in Nanoelectronics, Sensors, and Standards,,2003
  2. G. Iannaccone,Special Issue on the Proceedings of the Workshop on Modeling and Simulation of Electron Devices, G. Iannaccone,2006